component
15P06
Public Made by Adomby adom
HL MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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15P06
HL · MOSFETs · TO-252
15P06 from HL, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, rated for ±20 V gate-source voltage, with threshold of -1 to -2.5 V. |
| 2 | D | passive | Drain (also the exposed tab), rated for -60 V drain-source voltage and -15 A continuous current at TC=25°C. |
| 3 | S | passive | Source of the P-channel MOSFET, with a continuous body-diode source current of -15 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HL |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 70 | 90 | mΩ | VGS=-10V, ID=-10A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 85 | 115 | mΩ | VGS=-4.5V, ID=-5A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -2.5 | V | VDS=VGS, ID=-250uA | 2 | |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-48V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | -5 | uA | VDS=-48V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | 100 | nA | VGS=±20V, VDS=0V | 2 | ||
| Continuous Source Current | IS | -15 | A | VG=VD=0V, force current | 2 | ||
| Pulsed Source Current | ISM | -26 | A | 2 | |||
| Diode Forward Voltage | VSD | -1 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current, VGS @ -10V | ID | -15 | A | T=25℃ | 1 | ||
| Continuous Drain Current, VGS @ -10V | ID | -8.3 | A | T=100℃ | 1 | ||
| Continuous Drain Current, VGS @ -10V | ID | -3.3 | A | T=25℃ | 1 | ||
| Continuous Drain Current, VGS @ -10V | ID | -2.7 | A | T=70℃ | 1 | ||
| Pulsed Drain Current | IDM | -26 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 29.8 | mJ | 1 | |||
| Avalanche Current | IAS | -13 | A | 1 | |||
| Total Power Dissipation | PD | 31.3 | W | T=25℃ | 1 | ||
| Total Power Dissipation | PD | 2 | W | T=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 4 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | -0.023 | V/℃ | Reference to 25℃, ID=-1mA | 2 | ||
| Gate Threshold Voltage Temperature Coefficient | ΔVGS(th)/ΔTJ | 4.65 | mV/℃ | 2 | |||
| Forward Transconductance | gfs | 8.7 | S | VDS=-5V, ID=-4A | 2 | ||
| Gate Resistance | Rg | 15 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 | ||
| Total Gate Charge (-4.5V) | Qg | 11.8 | nC | VDS=-12V, VGS=-4.5V, ID=-6A | 2 | ||
| Gate-Source Charge | Qgs | 1.9 | nC | VDS=-12V, VGS=-4.5V, ID=-6A | 2 | ||
| Gate-Drain Charge | Qgd | 6.5 | nC | VDS=-12V, VGS=-4.5V, ID=-6A | 2 | ||
| Turn-On Delay Time | td(on) | 8.8 | ns | VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-1A | 2 | ||
| Rise Time | tr | 19.6 | ns | VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-1A | 2 | ||
| Turn-Off Delay Time | td(off) | 47.2 | ns | VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-1A | 2 | ||
| Fall Time | tf | 9.6 | ns | VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-1A | 2 | ||
| Input Capacitance | Ciss | 1080 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 73 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 50 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
15P06 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
15p06-etched.step/15p06-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);15p06.step/15p06.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HL datasheet (5 pp, sha256
63bacf9a20691cc9, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 15P06
**HL** · MOSFETs · TO-252
15P06 from HL, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, rated for ±20 V gate-source voltage, with threshold of -1 to -2.5 V. |
| 2 | D | passive | Drain (also the exposed tab), rated for -60 V drain-source voltage and -15 A continuous current at TC=25°C. |
| 3 | S | passive | Source of the P-channel MOSFET, with a continuous body-diode source current of -15 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HL |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -60 | | | V | VGS=0V, ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 70 | 90 | mΩ | VGS=-10V, ID=-10A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 85 | 115 | mΩ | VGS=-4.5V, ID=-5A | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | | -2.5 | V | VDS=VGS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | -1 | uA | VDS=-48V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | -5 | uA | VDS=-48V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Continuous Source Current | IS | -15 | | | A | VG=VD=0V, force current | 2 |
| Pulsed Source Current | ISM | -26 | | | A | | 2 |
| Diode Forward Voltage | VSD | | | -1 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
| Drain-Source Voltage | VDS | -60 | | | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current, VGS @ -10V | ID | -15 | | | A | T=25℃ | 1 |
| Continuous Drain Current, VGS @ -10V | ID | -8.3 | | | A | T=100℃ | 1 |
| Continuous Drain Current, VGS @ -10V | ID | -3.3 | | | A | T=25℃ | 1 |
| Continuous Drain Current, VGS @ -10V | ID | -2.7 | | | A | T=70℃ | 1 |
| Pulsed Drain Current | IDM | -26 | | | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 29.8 | mJ | | 1 |
| Avalanche Current | IAS | -13 | | | A | | 1 |
| Total Power Dissipation | PD | | | 31.3 | W | T=25℃ | 1 |
| Total Power Dissipation | PD | | | 2 | W | T=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 62 | ℃/W | | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 4 | ℃/W | | 1 |
| Drain-Source Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | | -0.023 | | V/℃ | Reference to 25℃, ID=-1mA | 2 |
| Gate Threshold Voltage Temperature Coefficient | ΔVGS(th)/ΔTJ | | 4.65 | | mV/℃ | | 2 |
| Forward Transconductance | gfs | | 8.7 | | S | VDS=-5V, ID=-4A | 2 |
| Gate Resistance | Rg | | 15 | | Ω | VDS=0V, VGS=0V, f=1MHz | 2 |
| Total Gate Charge (-4.5V) | Qg | | 11.8 | | nC | VDS=-12V, VGS=-4.5V, ID=-6A | 2 |
| Gate-Source Charge | Qgs | | 1.9 | | nC | VDS=-12V, VGS=-4.5V, ID=-6A | 2 |
| Gate-Drain Charge | Qgd | | 6.5 | | nC | VDS=-12V, VGS=-4.5V, ID=-6A | 2 |
| Turn-On Delay Time | td(on) | | 8.8 | | ns | VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-1A | 2 |
| Rise Time | tr | | 19.6 | | ns | VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-1A | 2 |
| Turn-Off Delay Time | td(off) | | 47.2 | | ns | VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-1A | 2 |
| Fall Time | tf | | 9.6 | | ns | VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-1A | 2 |
| Input Capacitance | Ciss | | 1080 | | pF | VDS=-15V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss | | 73 | | pF | VDS=-15V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 50 | | pF | VDS=-15V, VGS=0V, f=1MHz | 2 |
## CAD (KiCad official)
- Symbol: `15P06`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `15p06-etched.step` / `15p06-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `15p06.step` / `15p06.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HL datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590921379699380224) (5 pp, sha256 `63bacf9a20691cc9`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/15p06-datasheet.pdf)