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15P06

Public Made by Adom

by adom

HL MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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15P06

HL · MOSFETs · TO-252

15P06 from HL, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET, rated for ±20 V gate-source voltage, with threshold of -1 to -2.5 V.
2 D passive Drain (also the exposed tab), rated for -60 V drain-source voltage and -15 A continuous current at TC=25°C.
3 S passive Source of the P-channel MOSFET, with a continuous body-diode source current of -15 A.

Key specifications

Parameter Value
Manufacturer HL
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -60 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 70 90 mΩ VGS=-10V, ID=-10A 2
Static Drain-Source On-Resistance RDS(ON) 85 115 mΩ VGS=-4.5V, ID=-5A 2
Gate Threshold Voltage VGS(th) -1 -2.5 V VDS=VGS, ID=-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-48V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS -5 uA VDS=-48V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS -15 A VG=VD=0V, force current 2
Pulsed Source Current ISM -26 A 2
Diode Forward Voltage VSD -1 V VGS=0V, IS=-1A, TJ=25℃ 2
Drain-Source Voltage VDS -60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current, VGS @ -10V ID -15 A T=25℃ 1
Continuous Drain Current, VGS @ -10V ID -8.3 A T=100℃ 1
Continuous Drain Current, VGS @ -10V ID -3.3 A T=25℃ 1
Continuous Drain Current, VGS @ -10V ID -2.7 A T=70℃ 1
Pulsed Drain Current IDM -26 A 1
Single Pulse Avalanche Energy EAS 29.8 mJ 1
Avalanche Current IAS -13 A 1
Total Power Dissipation PD 31.3 W T=25℃ 1
Total Power Dissipation PD 2 W T=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W 1
Thermal Resistance Junction-Case RθJC 4 ℃/W 1
Drain-Source Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ -0.023 V/℃ Reference to 25℃, ID=-1mA 2
Gate Threshold Voltage Temperature Coefficient ΔVGS(th)/ΔTJ 4.65 mV/℃ 2
Forward Transconductance gfs 8.7 S VDS=-5V, ID=-4A 2
Gate Resistance Rg 15 Ω VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge (-4.5V) Qg 11.8 nC VDS=-12V, VGS=-4.5V, ID=-6A 2
Gate-Source Charge Qgs 1.9 nC VDS=-12V, VGS=-4.5V, ID=-6A 2
Gate-Drain Charge Qgd 6.5 nC VDS=-12V, VGS=-4.5V, ID=-6A 2
Turn-On Delay Time td(on) 8.8 ns VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-1A 2
Rise Time tr 19.6 ns VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-1A 2
Turn-Off Delay Time td(off) 47.2 ns VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-1A 2
Fall Time tf 9.6 ns VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-1A 2
Input Capacitance Ciss 1080 pF VDS=-15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 73 pF VDS=-15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 50 pF VDS=-15V, VGS=0V, f=1MHz 2

CAD (KiCad official)

  • Symbol: 15P06
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: 15p06-etched.step / 15p06-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 15p06.step / 15p06.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HL datasheet (5 pp, sha256 63bacf9a20691cc9, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF