# 13001

**HXY MOSFET** · Bipolar (BJT) · SOT-23

13001 from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; the datasheet drawing labels B but does not print a pin number, and its maximum emitter-base voltage VEBO is 7 V. |
| 2 | E | passive | Emitter of the NPN transistor; the drawing labels E without a printed pin number, and VEBO is 7 V maximum. |
| 3 | C | passive | Collector of the NPN transistor, the lone lead on one side of the SOT-23; maximum VCBO is 600 V, VCEO is 420 V and IC is 200 mA. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO |  |  | 600 | V |  | 1 |
| Collector-Emitter Voltage | VCEO |  |  | 420 | V |  | 1 |
| Emitter-Base Voltage | VEBO |  |  | 7 | V |  | 1 |
| Collector Current | IC |  |  | 200 | mA |  | 1 |
| Collector Power Dissipation | PC |  |  | 300 | mW |  | 1 |
| Thermal Resistance From Junction To Ambient | RΘJA |  |  | 400 | ℃/W |  | 1 |
| Junction Temperature | Tj |  |  | 150 | ℃ |  | 1 |
| Storage Temperature | Tstg | -55 |  | 150 | ℃ |  | 1 |
| Collector-base breakdown voltage | V(BR)CBO | 600 |  |  | V | IC=100µA, IE=0 | 2 |
| Collector-emitter breakdown voltage | V(BR)CEO | 420 |  |  | V | IC=1mA, IB=0 | 2 |
| Emitter-base breakdown voltage | V(BR)EBO | 7 |  |  | V | IE=100µA, IC=0 | 2 |
| Collector cut-off current | ICBO |  |  | 100 | µA | VCB=600V, IE=0 | 2 |
| Collector cut-off current | ICEO |  |  | 200 | µA | VCE=400V, IE=0 | 2 |
| Emitter cut-off current | IEBO |  |  | 100 | µA | VEB=7V, IC=0 | 2 |
| DC current gain(1) | hFE(1) | 20 | 30 |  |  | VCE=20V, IC=20mA | 2 |
| DC current gain(2) | hFE(2) | 5 |  |  |  | VCE=10V, IC=0.25mA | 2 |
| Collector-emitter saturation voltage | VCE(sat)1 |  |  | 0.5 | V | IC=50mA, IB=10mA | 2 |
| Base-emitter saturation voltage | VBE(sat)1 |  |  | 1.2 | V |  | 2 |
| Transition frequency | fT | 8 |  |  | MHz | VCE=20V, IC=20mA, f=1MHz | 2 |
| Fall time | tf |  | 0.3 |  | µS | IC=50mA, VCC=45V, IB1=-IB2=5mA | 2 |
| Storage time | ts |  | 1.5 |  | µS |  | 2 |

## CAD (KiCad official)

- Symbol: `13001`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `13001-etched.step` / `13001-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `13001.step` / `13001.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757150716030918656) (5 pp, sha256 `e643707f13e7cae6`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/13001-datasheet.pdf)