component
13001
Public Made by Adomby adom
HXY MOSFET Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13d ago |
| viewers | 13d ago |
| 13001-etched.glb | 13d ago |
| 13001-etched.step | 13d ago |
| 13001-hero.glb | 13d ago |
| 13001-hero.overlay.json | 13d ago |
| 13001.glb | 13d ago |
| 13001.kicad_mod | 13d ago |
| 13001.kicad_sym | 13d ago |
| 13001.lbr | 13d ago |
| 13001.step | 13d ago |
| package.json | 13d ago |
| page.json | 7d ago |
| README.md | 7d ago |
13001
HXY MOSFET · Bipolar (BJT) · SOT-23
13001 from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; the datasheet drawing labels B but does not print a pin number, and its maximum emitter-base voltage VEBO is 7 V. |
| 2 | E | passive | Emitter of the NPN transistor; the drawing labels E without a printed pin number, and VEBO is 7 V maximum. |
| 3 | C | passive | Collector of the NPN transistor, the lone lead on one side of the SOT-23; maximum VCBO is 600 V, VCEO is 420 V and IC is 200 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 600 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | 420 | V | 1 | |||
| Emitter-Base Voltage | VEBO | 7 | V | 1 | |||
| Collector Current | IC | 200 | mA | 1 | |||
| Collector Power Dissipation | PC | 300 | mW | 1 | |||
| Thermal Resistance From Junction To Ambient | RΘJA | 400 | ℃/W | 1 | |||
| Junction Temperature | Tj | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Collector-base breakdown voltage | V(BR)CBO | 600 | V | IC=100µA, IE=0 | 2 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 420 | V | IC=1mA, IB=0 | 2 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 7 | V | IE=100µA, IC=0 | 2 | ||
| Collector cut-off current | ICBO | 100 | µA | VCB=600V, IE=0 | 2 | ||
| Collector cut-off current | ICEO | 200 | µA | VCE=400V, IE=0 | 2 | ||
| Emitter cut-off current | IEBO | 100 | µA | VEB=7V, IC=0 | 2 | ||
| DC current gain(1) | hFE(1) | 20 | 30 | VCE=20V, IC=20mA | 2 | ||
| DC current gain(2) | hFE(2) | 5 | VCE=10V, IC=0.25mA | 2 | |||
| Collector-emitter saturation voltage | VCE(sat)1 | 0.5 | V | IC=50mA, IB=10mA | 2 | ||
| Base-emitter saturation voltage | VBE(sat)1 | 1.2 | V | 2 | |||
| Transition frequency | fT | 8 | MHz | VCE=20V, IC=20mA, f=1MHz | 2 | ||
| Fall time | tf | 0.3 | µS | IC=50mA, VCC=45V, IB1=-IB2=5mA | 2 | ||
| Storage time | ts | 1.5 | µS | 2 |
CAD (KiCad official)
- Symbol:
13001 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
13001-etched.step/13001-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);13001.step/13001.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
e643707f13e7cae6, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).