component
12P10L-TN3-R
Public Made by Adomby adom
UTC Unisonic Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
12P10L-TN3-R
UTC Unisonic Tech · MOSFETs · TO-252
12P10L-TN3-R from UTC Unisonic Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the -100 V P-channel MOSFET; gate-source voltage is rated ±30 V (VGSS). |
| 2 | D | passive | Drain terminal; drain-source voltage is rated -100 V (VDSS) with continuous drain current of -9.4 A (ID). |
| 3 | S | passive | Source terminal; maximum body-diode continuous current is -9.4 A (IS). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -100 | V | 3 | |||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 3 | ||
| Continuous Drain Current | ID | -9.4 | A | 3 | |||
| Pulsed Drain Current | IDM | -37.6 | A | Pulse width limited by TJ(MAX) (Note 2) | 3 | ||
| Avalanche Current | IAR | -9.4 | A | Note 2 | 3 | ||
| Single Pulsed Avalanche Energy | EAS | 280 | mJ | L=6.3mH, IAS=-9.4A, VDD=-25V, RG=25Ω, Starting TJ=25°C (Note 3) | 3 | ||
| Repetitive Avalanche Energy | EAR | 5 | mJ | Note 2 | 3 | ||
| Power Dissipation (TO-251/TO-251S/TO-251S2/TO-251S4/TO-252/TO-252D group) | PD | 50 | W | TO-252/TO-252D package (group rating) | 3 | ||
| Junction Temperature | TJ | 150 | °C | 3 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 3 | ||
| Drain-Source Breakdown Voltage | BVDSS | -100 | V | VGS=0 V, ID=-250µA | 4 | ||
| Drain-Source Leakage Current | IDSS | -1 | µA | VDS=-100V, VGS=0V | 4 | ||
| Drain-Source Leakage Current | IDSS | -10 | µA | VDS=-100V, TC=125°C | 4 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±30V | 4 | |
| Gate Threshold Voltage | VGS(TH) | -2 | -4 | V | VDS=VGS, ID=-250µA | 4 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.24 | 0.29 | Ω | VGS=-10V, ID=-4.7A | 4 | |
| Input Capacitance | CISS | 570 | 800 | pF | VDS=-25V, VGS=0V, f=1.0MHz | 4 | |
| Output Capacitance | COSS | 115 | 290 | pF | VDS=-25V, VGS=0V, f=1.0MHz | 4 | |
| Reverse Transfer Capacitance | CRSS | 30 | 85 | pF | VDS=-25V, VGS=0V, f=1.0MHz | 4 | |
| Total Gate Charge | QG | 21 | 27 | nC | VDS=-50V, ID=-1.3A, VGS=-10V (Note 1, 2) | 4 | |
| Turn-ON Delay Time | tD(ON) | 40 | 50 | ns | VDD=-30V, ID=-0.5A, RG=25Ω (Note 1, 2) | 4 | |
| Turn-ON Rise Time | tR | 64 | 100 | ns | VDD=-30V, ID=-0.5A, RG=25Ω (Note 1, 2) | 4 | |
| Turn-OFF Delay Time | tD(OFF) | 255 | 275 | ns | VDD=-30V, ID=-0.5A, RG=25Ω (Note 1, 2) | 4 | |
| Turn-OFF Fall-Time | tF | 70 | 90 | ns | VDD=-30V, ID=-0.5A, RG=25Ω (Note 1, 2) | 4 | |
| Maximum Body-Diode Continuous Current | IS | -9.4 | A | 4 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | -37.6 | A | 4 | |||
| Diode Forward Voltage | VSD | -4 | V | VGS=0V, IS=-9.4A | 4 | ||
| Gate Source Charge | QGS | 4.6 | nC | VDS=-50V, ID=-1.3A, VGS=-10V (Note 1, 2) | 4 | ||
| Gate Drain Charge | QGD | 4 | nC | VDS=-50V, ID=-1.3A, VGS=-10V (Note 1, 2) | 4 | ||
| Forward Transconductance | gFS | 6.3 | S | VDS=-40V, ID=-4.7A (Note 1) | 4 | ||
| Junction to Ambient (TO-252/TO-252D) | θJA | 110 | °C/W | TO-251/TO-251S/TO-251S2/TO-251S4/TO-252/TO-252D group | 3 | ||
| Junction to Case (TO-252/TO-252D) | θJC | 2.5 | °C/W | TO-251/TO-251S/TO-251S2/TO-251S4/TO-252/TO-252D group | 3 |
CAD (KiCad official)
- Symbol:
12P10L-TN3-R - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
12p10l-tn3-r-etched.step/12p10l-tn3-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);12p10l-tn3-r.step/12p10l-tn3-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC Unisonic Tech datasheet (8 pp, sha256
7202b9bc2f003167, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 12P10L-TN3-R
**UTC Unisonic Tech** · MOSFETs · TO-252
12P10L-TN3-R from UTC Unisonic Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the -100 V P-channel MOSFET; gate-source voltage is rated ±30 V (VGSS). |
| 2 | D | passive | Drain terminal; drain-source voltage is rated -100 V (VDSS) with continuous drain current of -9.4 A (ID). |
| 3 | S | passive | Source terminal; maximum body-diode continuous current is -9.4 A (IS). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | -100 | V | | 3 |
| Gate-Source Voltage | VGSS | -30 | | 30 | V | | 3 |
| Continuous Drain Current | ID | | | -9.4 | A | | 3 |
| Pulsed Drain Current | IDM | | | -37.6 | A | Pulse width limited by TJ(MAX) (Note 2) | 3 |
| Avalanche Current | IAR | | | -9.4 | A | Note 2 | 3 |
| Single Pulsed Avalanche Energy | EAS | | | 280 | mJ | L=6.3mH, IAS=-9.4A, VDD=-25V, RG=25Ω, Starting TJ=25°C (Note 3) | 3 |
| Repetitive Avalanche Energy | EAR | | | 5 | mJ | Note 2 | 3 |
| Power Dissipation (TO-251/TO-251S/TO-251S2/TO-251S4/TO-252/TO-252D group) | PD | | | 50 | W | TO-252/TO-252D package (group rating) | 3 |
| Junction Temperature | TJ | | | 150 | °C | | 3 |
| Storage Temperature | TSTG | -55 | | 150 | °C | | 3 |
| Drain-Source Breakdown Voltage | BVDSS | -100 | | | V | VGS=0 V, ID=-250µA | 4 |
| Drain-Source Leakage Current | IDSS | | | -1 | µA | VDS=-100V, VGS=0V | 4 |
| Drain-Source Leakage Current | IDSS | | | -10 | µA | VDS=-100V, TC=125°C | 4 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±30V | 4 |
| Gate Threshold Voltage | VGS(TH) | -2 | | -4 | V | VDS=VGS, ID=-250µA | 4 |
| Static Drain-Source On-Resistance | RDS(ON) | | 0.24 | 0.29 | Ω | VGS=-10V, ID=-4.7A | 4 |
| Input Capacitance | CISS | | 570 | 800 | pF | VDS=-25V, VGS=0V, f=1.0MHz | 4 |
| Output Capacitance | COSS | | 115 | 290 | pF | VDS=-25V, VGS=0V, f=1.0MHz | 4 |
| Reverse Transfer Capacitance | CRSS | | 30 | 85 | pF | VDS=-25V, VGS=0V, f=1.0MHz | 4 |
| Total Gate Charge | QG | | 21 | 27 | nC | VDS=-50V, ID=-1.3A, VGS=-10V (Note 1, 2) | 4 |
| Turn-ON Delay Time | tD(ON) | | 40 | 50 | ns | VDD=-30V, ID=-0.5A, RG=25Ω (Note 1, 2) | 4 |
| Turn-ON Rise Time | tR | | 64 | 100 | ns | VDD=-30V, ID=-0.5A, RG=25Ω (Note 1, 2) | 4 |
| Turn-OFF Delay Time | tD(OFF) | | 255 | 275 | ns | VDD=-30V, ID=-0.5A, RG=25Ω (Note 1, 2) | 4 |
| Turn-OFF Fall-Time | tF | | 70 | 90 | ns | VDD=-30V, ID=-0.5A, RG=25Ω (Note 1, 2) | 4 |
| Maximum Body-Diode Continuous Current | IS | | | -9.4 | A | | 4 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | | | -37.6 | A | | 4 |
| Diode Forward Voltage | VSD | | | -4 | V | VGS=0V, IS=-9.4A | 4 |
| Gate Source Charge | QGS | | 4.6 | | nC | VDS=-50V, ID=-1.3A, VGS=-10V (Note 1, 2) | 4 |
| Gate Drain Charge | QGD | | 4 | | nC | VDS=-50V, ID=-1.3A, VGS=-10V (Note 1, 2) | 4 |
| Forward Transconductance | gFS | | 6.3 | | S | VDS=-40V, ID=-4.7A (Note 1) | 4 |
| Junction to Ambient (TO-252/TO-252D) | θJA | | 110 | | °C/W | TO-251/TO-251S/TO-251S2/TO-251S4/TO-252/TO-252D group | 3 |
| Junction to Case (TO-252/TO-252D) | θJC | | 2.5 | | °C/W | TO-251/TO-251S/TO-251S2/TO-251S4/TO-252/TO-252D group | 3 |
## CAD (KiCad official)
- Symbol: `12P10L-TN3-R`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `12p10l-tn3-r-etched.step` / `12p10l-tn3-r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `12p10l-tn3-r.step` / `12p10l-tn3-r.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UTC Unisonic Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586202981130260480) (8 pp, sha256 `7202b9bc2f003167`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/12p10l-tn3-r-datasheet.pdf)