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12P10L-TN3-R

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UTC Unisonic Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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12P10L-TN3-R

UTC Unisonic Tech · MOSFETs · TO-252

12P10L-TN3-R from UTC Unisonic Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the -100 V P-channel MOSFET; gate-source voltage is rated ±30 V (VGSS).
2 D passive Drain terminal; drain-source voltage is rated -100 V (VDSS) with continuous drain current of -9.4 A (ID).
3 S passive Source terminal; maximum body-diode continuous current is -9.4 A (IS).

Key specifications

Parameter Value
Manufacturer UTC Unisonic Tech
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS -100 V 3
Gate-Source Voltage VGSS -30 30 V 3
Continuous Drain Current ID -9.4 A 3
Pulsed Drain Current IDM -37.6 A Pulse width limited by TJ(MAX) (Note 2) 3
Avalanche Current IAR -9.4 A Note 2 3
Single Pulsed Avalanche Energy EAS 280 mJ L=6.3mH, IAS=-9.4A, VDD=-25V, RG=25Ω, Starting TJ=25°C (Note 3) 3
Repetitive Avalanche Energy EAR 5 mJ Note 2 3
Power Dissipation (TO-251/TO-251S/TO-251S2/TO-251S4/TO-252/TO-252D group) PD 50 W TO-252/TO-252D package (group rating) 3
Junction Temperature TJ 150 °C 3
Storage Temperature TSTG -55 150 °C 3
Drain-Source Breakdown Voltage BVDSS -100 V VGS=0 V, ID=-250µA 4
Drain-Source Leakage Current IDSS -1 µA VDS=-100V, VGS=0V 4
Drain-Source Leakage Current IDSS -10 µA VDS=-100V, TC=125°C 4
Gate-Source Leakage Current IGSS -100 100 nA VDS=0V, VGS=±30V 4
Gate Threshold Voltage VGS(TH) -2 -4 V VDS=VGS, ID=-250µA 4
Static Drain-Source On-Resistance RDS(ON) 0.24 0.29 Ω VGS=-10V, ID=-4.7A 4
Input Capacitance CISS 570 800 pF VDS=-25V, VGS=0V, f=1.0MHz 4
Output Capacitance COSS 115 290 pF VDS=-25V, VGS=0V, f=1.0MHz 4
Reverse Transfer Capacitance CRSS 30 85 pF VDS=-25V, VGS=0V, f=1.0MHz 4
Total Gate Charge QG 21 27 nC VDS=-50V, ID=-1.3A, VGS=-10V (Note 1, 2) 4
Turn-ON Delay Time tD(ON) 40 50 ns VDD=-30V, ID=-0.5A, RG=25Ω (Note 1, 2) 4
Turn-ON Rise Time tR 64 100 ns VDD=-30V, ID=-0.5A, RG=25Ω (Note 1, 2) 4
Turn-OFF Delay Time tD(OFF) 255 275 ns VDD=-30V, ID=-0.5A, RG=25Ω (Note 1, 2) 4
Turn-OFF Fall-Time tF 70 90 ns VDD=-30V, ID=-0.5A, RG=25Ω (Note 1, 2) 4
Maximum Body-Diode Continuous Current IS -9.4 A 4
Maximum Pulsed Drain-Source Diode Forward Current ISM -37.6 A 4
Diode Forward Voltage VSD -4 V VGS=0V, IS=-9.4A 4
Gate Source Charge QGS 4.6 nC VDS=-50V, ID=-1.3A, VGS=-10V (Note 1, 2) 4
Gate Drain Charge QGD 4 nC VDS=-50V, ID=-1.3A, VGS=-10V (Note 1, 2) 4
Forward Transconductance gFS 6.3 S VDS=-40V, ID=-4.7A (Note 1) 4
Junction to Ambient (TO-252/TO-252D) θJA 110 °C/W TO-251/TO-251S/TO-251S2/TO-251S4/TO-252/TO-252D group 3
Junction to Case (TO-252/TO-252D) θJC 2.5 °C/W TO-251/TO-251S/TO-251S2/TO-251S4/TO-252/TO-252D group 3

CAD (KiCad official)

  • Symbol: 12P10L-TN3-R
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: 12p10l-tn3-r-etched.step / 12p10l-tn3-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 12p10l-tn3-r.step / 12p10l-tn3-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC Unisonic Tech datasheet (8 pp, sha256 7202b9bc2f003167, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF