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12N10

UMW · MOSFETs · TO-252

12N10 from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE terminal of the N-channel MOSFET; the gate-source voltage is rated at ±20 V (VGS) in the absolute maximum ratings.
2 D passive DRAIN terminal; the device is rated at VDS = 100 V with ID = 15 A at VGS = 10 V.
3 S passive SOURCE terminal; the continuous source current (diode conduction) is rated at 13 A at TC = 25°C in the absolute maximum ratings.

Key specifications

Parameter Value
Manufacturer UMW
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V TA=25°C 1
Gate-Source Voltage VGS -20 20 V TA=25°C 1
Operating Junction Temperature Range and storage temperature TJ, TSTG -55 175 °C 1
Pulsed Drain Current IDM 40 A 1
Maximum Power Dissipation PD 96 W TC=25°C 1
Maximum Power Dissipation PD 3 W TA=25°C 1
Junction-to-Ambient, maximum RθJA 15 18 °C/W t ≤ 10s 2
Junction-to-Ambient, maximum RθJA 40 50 °C/W Steady-State 2
Junction-to-Case (Drain) RθJC 0.85 1.1 °C/W 2
Drain-source breakdown voltage VDS 100 V VGS=0V, ID=250µA 3
Gate Threshold Voltage VGS(th) 1 2.5 V VDS=VGS, ID=250µA 3
Gate-Body Leakage IGSS -100 100 nA VDS=0V, VGS=±20V 3
Zero Gate Voltage Drain Current IDSS 1 µA VDS=100V, VGS=0V 3
Zero Gate Voltage Drain Current IDSS 50 µA VDS=100V, VGS=0V, TJ=125°C 3
Zero Gate Voltage Drain Current IDSS 250 µA VDS=100V, VGS=0V, TJ=175°C 3
On-State Drain Current ID(ON) 40 A VDS=5V, VGS=10V 3
Diode Forward Voltage VSD 0.9 1.5 V IF=3A, VGS=0V 4
Source-Drain Reverse Recovery Time trr 180 250 ns IF=3A, dI/dt=100A/μs 4
Drain-Source On-State Resistance RDS(ON) 114 mΩ VGS=10V, ID=3A 3
Drain-Source On-State Resistance RDS(ON) 120 mΩ VGS=10V, ID=3A, TJ=125°C 3
Drain-Source On-State Resistance RDS(ON) 140 mΩ VGS=10V, ID=3A, TJ=175°C 3
Input Capacitance Ciss 950 pF VGS=0V, VDS=25V, F=1MHz 3
Output Capacitance Coss 120 pF VGS=0V, VDS=25V, F=1MHz 3
Reverse Transfer Capacitance Crss 60 pF VGS=0V, VDS=25V, F=1MHz 3

CAD (KiCad official)

  • Symbol: 12N10
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: 12n10-etched.step / 12n10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 12n10.step / 12n10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (9 pp, sha256 baf254df45320198, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF