12N10 from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	GATE terminal of the N-channel MOSFET; the gate-source voltage is rated at ±20 V (VGS) in the absolute maximum ratings.
2	D	passive	DRAIN terminal; the device is rated at VDS = 100 V with ID = 15 A at VGS = 10 V.
3	S	passive	SOURCE terminal; the continuous source current (diode conduction) is rated at 13 A at TC = 25°C in the absolute maximum ratings.

Key specifications

Parameter	Value
Manufacturer	UMW
Package	TO-252
Category	Triode/MOS Tube/Transistor
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDS			100	V	TA=25°C	1
Gate-Source Voltage	VGS	-20		20	V	TA=25°C	1
Operating Junction Temperature Range and storage temperature	TJ, TSTG	-55		175	°C		1
Pulsed Drain Current	IDM			40	A		1
Maximum Power Dissipation	PD			96	W	TC=25°C	1
Maximum Power Dissipation	PD			3	W	TA=25°C	1
Junction-to-Ambient, maximum	RθJA		15	18	°C/W	t ≤ 10s	2
Junction-to-Ambient, maximum	RθJA		40	50	°C/W	Steady-State	2
Junction-to-Case (Drain)	RθJC		0.85	1.1	°C/W		2
Drain-source breakdown voltage	VDS	100			V	VGS=0V, ID=250µA	3
Gate Threshold Voltage	VGS(th)	1		2.5	V	VDS=VGS, ID=250µA	3
Gate-Body Leakage	IGSS	-100		100	nA	VDS=0V, VGS=±20V	3
Zero Gate Voltage Drain Current	IDSS			1	µA	VDS=100V, VGS=0V	3
Zero Gate Voltage Drain Current	IDSS			50	µA	VDS=100V, VGS=0V, TJ=125°C	3
Zero Gate Voltage Drain Current	IDSS			250	µA	VDS=100V, VGS=0V, TJ=175°C	3
On-State Drain Current	ID(ON)	40			A	VDS=5V, VGS=10V	3
Diode Forward Voltage	VSD		0.9	1.5	V	IF=3A, VGS=0V	4
Source-Drain Reverse Recovery Time	trr		180	250	ns	IF=3A, dI/dt=100A/μs	4
Drain-Source On-State Resistance	RDS(ON)		114		mΩ	VGS=10V, ID=3A	3
Drain-Source On-State Resistance	RDS(ON)		120		mΩ	VGS=10V, ID=3A, TJ=125°C	3
Drain-Source On-State Resistance	RDS(ON)		140		mΩ	VGS=10V, ID=3A, TJ=175°C	3
Input Capacitance	Ciss		950		pF	VGS=0V, VDS=25V, F=1MHz	3
Output Capacitance	Coss		120		pF	VGS=0V, VDS=25V, F=1MHz	3
Reverse Transfer Capacitance	Crss		60		pF	VGS=0V, VDS=25V, F=1MHz	3

CAD (KiCad official)

Symbol: 12N10
Footprint: Package_TO_SOT_SMD:TO-252-2
3D model: TO-252 (KiCad packages3D, STEP)
3D model files: 12n10-etched.step / 12n10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 12n10.step / 12n10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: UMW datasheet (9 pp, sha256 baf254df45320198, retrieved 2026-11-04, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

12N10

Verified 12N10

Verification log 1 record

3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

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