component
11NM70G-TN3-R
Public Made by Adomby adom
UTC(Unisonic Tech) MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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11NM70G-TN3-R
UTC(Unisonic Tech) · MOSFETs · TO-252
11NM70G-TN3-R from UTC(Unisonic Tech), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage rated at ±30 V maximum (VGSS), threshold 2.5 to 4.5 V at ID=250µA. |
| 2 | D | passive | Drain; drain-to-source voltage rated 700 V (VDSS), continuous drain current 11 A and pulsed 44 A. |
| 3 | S | passive | Source; body-diode continuous current 11 A and pulsed 44 A maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC(Unisonic Tech) |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 700 | V | VGS=0V, ID=250µA | 4 | ||
| Drain-Source Leakage Current | IDSS | 10 | µA | VDS=700V, VGS=0V | 4 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±30V | 4 | |
| Gate Threshold Voltage | VGS(TH) | 2.5 | 4.5 | V | VDS=VGS, ID=250µA | 4 | |
| Drain-Source On-State Resistance | RDS(ON) | 0.58 | Ω | VGS=10V, ID=5.5A | 4 | ||
| Maximum Body-Diode Continuous Current | IS | 11 | A | 4 | |||
| Maximum Body-Diode Pulsed Current | ISM | 44 | A | 4 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | IS=11A, VGS=0V | 4 | ||
| Drain to Source Voltage | VDSS | 700 | V | TC=25°C | 3 | ||
| Gate to Source Voltage | VGSS | -30 | 30 | V | TC=25°C | 3 | |
| Continuous Drain Current | ID | 11 | A | TC=25°C | 3 | ||
| Pulsed Drain Current | IDM | 44 | A | TC=25°C, pulse width limited by max junction temperature | 3 | ||
| Avalanche Current | IAR | 2.9 | A | TC=25°C | 3 | ||
| Avalanche Energy Single Pulsed | EAS | 273 | mJ | L=65mH, IAS=2.9A, VDD=50V, RG=25Ω, starting TJ=25°C | 3 | ||
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | ISD≤11A, di/dt≤200A/µs, VDD≤BVDSS, starting TJ=25°C | 3 | ||
| Power Dissipation (TO-252) | PD | 80 | W | TC=25°C | 3 | ||
| Junction Temperature | TJ | 150 | °C | 3 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 3 | ||
| Thermal Resistance Junction to Ambient | θJA | 62.5 | °C/W | 3 | |||
| Thermal Resistance Junction to Case (TO-252) | θJC | 1.56 | °C/W | 3 | |||
| Input Capacitance | CISS | 850 | pF | VDS=25V, VGS=0V, f=1.0MHz | 4 | ||
| Output Capacitance | COSS | 220 | pF | VDS=25V, VGS=0V, f=1.0MHz | 4 | ||
| Reverse Transfer Capacitance | CRSS | 12 | pF | VDS=25V, VGS=0V, f=1.0MHz | 4 | ||
| Total Gate Charge | QG | 70 | nC | VDS=50V, VGS=10V, ID=1.3A, IG=100µA | 4 | ||
| Gate to Source Charge | QGS | 8 | nC | VDS=50V, VGS=10V, ID=1.3A, IG=100µA | 4 | ||
| Gate to Drain Charge | QGD | 18 | nC | VDS=50V, VGS=10V, ID=1.3A, IG=100µA | 4 | ||
| Turn-ON Delay Time | tD(ON) | 65 | ns | VDD=30V, VGS=10V, ID=0.5A, RG=25Ω | 4 | ||
| Rise Time | tR | 62 | ns | VDD=30V, VGS=10V, ID=0.5A, RG=25Ω | 4 | ||
| Turn-OFF Delay Time | tD(OFF) | 220 | ns | VDD=30V, VGS=10V, ID=0.5A, RG=25Ω | 4 | ||
| Fall Time | tF | 78 | ns | VDD=30V, VGS=10V, ID=0.5A, RG=25Ω | 4 | ||
| Body Diode Reverse Recovery Time | trr | 400 | ns | IS=11A, VGS=0V, dIF/dt=100A/µs | 4 | ||
| Body Diode Reverse Recovery Charge | Qrr | 5.4 | µC | IS=11A, VGS=0V, dIF/dt=100A/µs | 4 |
CAD (KiCad official)
- Symbol:
11NM70G-TN3-R - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
11nm70g-tn3-r-etched.step/11nm70g-tn3-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);11nm70g-tn3-r.step/11nm70g-tn3-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC(Unisonic Tech) datasheet (7 pp, sha256
683cbd4bba915125, retrieved 2026-10-26, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 11NM70G-TN3-R
**UTC(Unisonic Tech)** · MOSFETs · TO-252
11NM70G-TN3-R from UTC(Unisonic Tech), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage rated at ±30 V maximum (VGSS), threshold 2.5 to 4.5 V at ID=250µA. |
| 2 | D | passive | Drain; drain-to-source voltage rated 700 V (VDSS), continuous drain current 11 A and pulsed 44 A. |
| 3 | S | passive | Source; body-diode continuous current 11 A and pulsed 44 A maximum. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC(Unisonic Tech) |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 700 | | | V | VGS=0V, ID=250µA | 4 |
| Drain-Source Leakage Current | IDSS | | | 10 | µA | VDS=700V, VGS=0V | 4 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±30V | 4 |
| Gate Threshold Voltage | VGS(TH) | 2.5 | | 4.5 | V | VDS=VGS, ID=250µA | 4 |
| Drain-Source On-State Resistance | RDS(ON) | | | 0.58 | Ω | VGS=10V, ID=5.5A | 4 |
| Maximum Body-Diode Continuous Current | IS | | | 11 | A | | 4 |
| Maximum Body-Diode Pulsed Current | ISM | | | 44 | A | | 4 |
| Drain-Source Diode Forward Voltage | VSD | | | 1.4 | V | IS=11A, VGS=0V | 4 |
| Drain to Source Voltage | VDSS | | | 700 | V | TC=25°C | 3 |
| Gate to Source Voltage | VGSS | -30 | | 30 | V | TC=25°C | 3 |
| Continuous Drain Current | ID | | | 11 | A | TC=25°C | 3 |
| Pulsed Drain Current | IDM | | | 44 | A | TC=25°C, pulse width limited by max junction temperature | 3 |
| Avalanche Current | IAR | | | 2.9 | A | TC=25°C | 3 |
| Avalanche Energy Single Pulsed | EAS | | | 273 | mJ | L=65mH, IAS=2.9A, VDD=50V, RG=25Ω, starting TJ=25°C | 3 |
| Peak Diode Recovery dv/dt | dv/dt | | | 4.5 | V/ns | ISD≤11A, di/dt≤200A/µs, VDD≤BVDSS, starting TJ=25°C | 3 |
| Power Dissipation (TO-252) | PD | | | 80 | W | TC=25°C | 3 |
| Junction Temperature | TJ | | | 150 | °C | | 3 |
| Storage Temperature | TSTG | -55 | | 150 | °C | | 3 |
| Thermal Resistance Junction to Ambient | θJA | | | 62.5 | °C/W | | 3 |
| Thermal Resistance Junction to Case (TO-252) | θJC | | | 1.56 | °C/W | | 3 |
| Input Capacitance | CISS | | 850 | | pF | VDS=25V, VGS=0V, f=1.0MHz | 4 |
| Output Capacitance | COSS | | 220 | | pF | VDS=25V, VGS=0V, f=1.0MHz | 4 |
| Reverse Transfer Capacitance | CRSS | | 12 | | pF | VDS=25V, VGS=0V, f=1.0MHz | 4 |
| Total Gate Charge | QG | | 70 | | nC | VDS=50V, VGS=10V, ID=1.3A, IG=100µA | 4 |
| Gate to Source Charge | QGS | | 8 | | nC | VDS=50V, VGS=10V, ID=1.3A, IG=100µA | 4 |
| Gate to Drain Charge | QGD | | 18 | | nC | VDS=50V, VGS=10V, ID=1.3A, IG=100µA | 4 |
| Turn-ON Delay Time | tD(ON) | | 65 | | ns | VDD=30V, VGS=10V, ID=0.5A, RG=25Ω | 4 |
| Rise Time | tR | | 62 | | ns | VDD=30V, VGS=10V, ID=0.5A, RG=25Ω | 4 |
| Turn-OFF Delay Time | tD(OFF) | | 220 | | ns | VDD=30V, VGS=10V, ID=0.5A, RG=25Ω | 4 |
| Fall Time | tF | | 78 | | ns | VDD=30V, VGS=10V, ID=0.5A, RG=25Ω | 4 |
| Body Diode Reverse Recovery Time | trr | | 400 | | ns | IS=11A, VGS=0V, dIF/dt=100A/µs | 4 |
| Body Diode Reverse Recovery Charge | Qrr | | 5.4 | | µC | IS=11A, VGS=0V, dIF/dt=100A/µs | 4 |
## CAD (KiCad official)
- Symbol: `11NM70G-TN3-R`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `11nm70g-tn3-r-etched.step` / `11nm70g-tn3-r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `11nm70g-tn3-r.step` / `11nm70g-tn3-r.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UTC(Unisonic Tech) datasheet](docs/11nm70g-tn3-r-datasheet.pdf) (7 pp, sha256 `683cbd4bba915125`, retrieved 2026-10-26, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/11nm70g-tn3-r-datasheet.pdf)