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11NM70G-TN3-R

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UTC(Unisonic Tech) MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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11NM70G-TN3-R

UTC(Unisonic Tech) · MOSFETs · TO-252

11NM70G-TN3-R from UTC(Unisonic Tech), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-source voltage rated at ±30 V maximum (VGSS), threshold 2.5 to 4.5 V at ID=250µA.
2 D passive Drain; drain-to-source voltage rated 700 V (VDSS), continuous drain current 11 A and pulsed 44 A.
3 S passive Source; body-diode continuous current 11 A and pulsed 44 A maximum.

Key specifications

Parameter Value
Manufacturer UTC(Unisonic Tech)
Package TO-252
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 700 V VGS=0V, ID=250µA 4
Drain-Source Leakage Current IDSS 10 µA VDS=700V, VGS=0V 4
Gate-Source Leakage Current IGSS -100 100 nA VDS=0V, VGS=±30V 4
Gate Threshold Voltage VGS(TH) 2.5 4.5 V VDS=VGS, ID=250µA 4
Drain-Source On-State Resistance RDS(ON) 0.58 Ω VGS=10V, ID=5.5A 4
Maximum Body-Diode Continuous Current IS 11 A 4
Maximum Body-Diode Pulsed Current ISM 44 A 4
Drain-Source Diode Forward Voltage VSD 1.4 V IS=11A, VGS=0V 4
Drain to Source Voltage VDSS 700 V TC=25°C 3
Gate to Source Voltage VGSS -30 30 V TC=25°C 3
Continuous Drain Current ID 11 A TC=25°C 3
Pulsed Drain Current IDM 44 A TC=25°C, pulse width limited by max junction temperature 3
Avalanche Current IAR 2.9 A TC=25°C 3
Avalanche Energy Single Pulsed EAS 273 mJ L=65mH, IAS=2.9A, VDD=50V, RG=25Ω, starting TJ=25°C 3
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns ISD≤11A, di/dt≤200A/µs, VDD≤BVDSS, starting TJ=25°C 3
Power Dissipation (TO-252) PD 80 W TC=25°C 3
Junction Temperature TJ 150 °C 3
Storage Temperature TSTG -55 150 °C 3
Thermal Resistance Junction to Ambient θJA 62.5 °C/W 3
Thermal Resistance Junction to Case (TO-252) θJC 1.56 °C/W 3
Input Capacitance CISS 850 pF VDS=25V, VGS=0V, f=1.0MHz 4
Output Capacitance COSS 220 pF VDS=25V, VGS=0V, f=1.0MHz 4
Reverse Transfer Capacitance CRSS 12 pF VDS=25V, VGS=0V, f=1.0MHz 4
Total Gate Charge QG 70 nC VDS=50V, VGS=10V, ID=1.3A, IG=100µA 4
Gate to Source Charge QGS 8 nC VDS=50V, VGS=10V, ID=1.3A, IG=100µA 4
Gate to Drain Charge QGD 18 nC VDS=50V, VGS=10V, ID=1.3A, IG=100µA 4
Turn-ON Delay Time tD(ON) 65 ns VDD=30V, VGS=10V, ID=0.5A, RG=25Ω 4
Rise Time tR 62 ns VDD=30V, VGS=10V, ID=0.5A, RG=25Ω 4
Turn-OFF Delay Time tD(OFF) 220 ns VDD=30V, VGS=10V, ID=0.5A, RG=25Ω 4
Fall Time tF 78 ns VDD=30V, VGS=10V, ID=0.5A, RG=25Ω 4
Body Diode Reverse Recovery Time trr 400 ns IS=11A, VGS=0V, dIF/dt=100A/µs 4
Body Diode Reverse Recovery Charge Qrr 5.4 µC IS=11A, VGS=0V, dIF/dt=100A/µs 4

CAD (KiCad official)

  • Symbol: 11NM70G-TN3-R
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: 11nm70g-tn3-r-etched.step / 11nm70g-tn3-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 11nm70g-tn3-r.step / 11nm70g-tn3-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC(Unisonic Tech) datasheet (7 pp, sha256 683cbd4bba915125, retrieved 2026-10-26, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF