component
11NM65L-TA3-T
Public Made by Adomby adom
UTC(Unisonic Tech) MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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11NM65L-TA3-T
UTC(Unisonic Tech) · MOSFETs · TO-220
11NM65L-TA3-T from UTC(Unisonic Tech), in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the datasheet's absolute maximum gate-source voltage VGSS is ±30 V. |
| 2 | D | passive | Drain terminal; the datasheet rates the drain-source voltage VDSS at 650 V and continuous drain current ID at 11 A. |
| 3 | S | passive | Source terminal; the body-diode maximum continuous current IS is 11 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC(Unisonic Tech) |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 650 | V | 3 | |||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 3 | ||
| Drain Current Continuous | ID | 11 | A | TC = 25°C | 3 | ||
| Pulsed Drain Current | IDM | 44 | A | Note 2 (repetitive, pulse width limited by Tj) | 3 | ||
| Avalanche Current | IAR | 2.3 | A | Note 2 | 3 | ||
| Avalanche Energy Single Pulsed | EAS | 415 | mJ | Note 3: L = 157mH, IAS = 2.3A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C | 3 | ||
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | Note 4: ISD≤11A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C | 3 | ||
| Power Dissipation (TO-220/TO-262) | PD | 100 | W | Package TO-220/TO-262 (TO-263 listed with same value) | 3 | ||
| Junction Temperature | TJ | 150 | °C | 3 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 3 | ||
| Junction to Ambient | θJA | 62.5 | °С/W | Package TO-220/TO-220F, TO-220F1/TO-220F2, TO-262/TO-263 group | 3 | ||
| Junction to Case | θJC | 1.25 | °С/W | Package TO-220/TO-262 (TO-263 listed with same value) | 3 | ||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V, ID=250µA | 4 | ||
| Drain-Source Leakage Current | IDSS | 10 | µA | VDS=650V, VGS=0V | 4 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±30V | 4 | |
| Gate Threshold Voltage | VGS(TH) | 2.5 | 4.5 | V | VDS= VGS, ID=250µA | 4 | |
| Drain-Source On-State Resistance | RDS(ON) | 0.43 | 0.52 | Ω | VGS=10V, ID=5.5A | 4 | |
| Input Capacitance | CISS | 770 | pF | VGS=0V, VDS=25V, f=1.0MHz | 4 | ||
| Output Capacitance | COSS | 580 | pF | 4 | |||
| Reverse Transfer Capacitance | CRSS | 52 | pF | 4 | |||
| Total Gate Charge | QG | 27 | nC | VDS=520V, VGS=10V, ID=11A, IG=1mA (Note 1, 2) | 4 | ||
| Gate-Source Charge | QGS | 5 | nC | 4 | |||
| Gate-Drain Charge | QGD | 8 | nC | 4 | |||
| Turn-ON Delay Time | tD(ON) | 11 | ns | VDD=100V, VGS=10V, ID=11A, RG=25Ω (Note 1, 2) | 4 | ||
| Turn-ON Rise Time | tR | 23 | ns | 4 | |||
| Turn-OFF Delay Time | tD(OFF) | 82 | ns | 4 | |||
| Turn-OFF Fall Time | tF | 47 | ns | 4 | |||
| Maximum Body-Diode Continuous Current | IS | 11 | A | 4 | |||
| Maximum Body-Diode Pulsed Current | ISM | 44 | A | 4 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | IS =11A, VGS=0V | 4 | ||
| Reverse Recovery Time | trr | 360 | ns | IS=11A, VGS=0V, di/dt=100A/μs | 4 | ||
| Reverse Recovery Charge | Qrr | 4.6 | μC | 4 |
CAD (KiCad official)
- Symbol:
11NM65L-TA3-T - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
11nm65l-ta3-t-etched.step/11nm65l-ta3-t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);11nm65l-ta3-t.step/11nm65l-ta3-t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC(Unisonic Tech) datasheet (9 pp, sha256
f53a53f6d992daf3, retrieved 2026-11-05, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 11NM65L-TA3-T
**UTC(Unisonic Tech)** · MOSFETs · TO-220
11NM65L-TA3-T from UTC(Unisonic Tech), in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the datasheet's absolute maximum gate-source voltage VGSS is ±30 V. |
| 2 | D | passive | Drain terminal; the datasheet rates the drain-source voltage VDSS at 650 V and continuous drain current ID at 11 A. |
| 3 | S | passive | Source terminal; the body-diode maximum continuous current IS is 11 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC(Unisonic Tech) |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 650 | V | | 3 |
| Gate-Source Voltage | VGSS | -30 | | 30 | V | | 3 |
| Drain Current Continuous | ID | | | 11 | A | TC = 25°C | 3 |
| Pulsed Drain Current | IDM | | | 44 | A | Note 2 (repetitive, pulse width limited by Tj) | 3 |
| Avalanche Current | IAR | | | 2.3 | A | Note 2 | 3 |
| Avalanche Energy Single Pulsed | EAS | | | 415 | mJ | Note 3: L = 157mH, IAS = 2.3A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C | 3 |
| Peak Diode Recovery dv/dt | dv/dt | | | 5 | V/ns | Note 4: ISD≤11A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C | 3 |
| Power Dissipation (TO-220/TO-262) | PD | | | 100 | W | Package TO-220/TO-262 (TO-263 listed with same value) | 3 |
| Junction Temperature | TJ | | | 150 | °C | | 3 |
| Storage Temperature | TSTG | -55 | | 150 | °C | | 3 |
| Junction to Ambient | θJA | | 62.5 | | °С/W | Package TO-220/TO-220F, TO-220F1/TO-220F2, TO-262/TO-263 group | 3 |
| Junction to Case | θJC | | 1.25 | | °С/W | Package TO-220/TO-262 (TO-263 listed with same value) | 3 |
| Drain-Source Breakdown Voltage | BVDSS | | 650 | | V | VGS=0V, ID=250µA | 4 |
| Drain-Source Leakage Current | IDSS | | 10 | | µA | VDS=650V, VGS=0V | 4 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±30V | 4 |
| Gate Threshold Voltage | VGS(TH) | 2.5 | | 4.5 | V | VDS= VGS, ID=250µA | 4 |
| Drain-Source On-State Resistance | RDS(ON) | | 0.43 | 0.52 | Ω | VGS=10V, ID=5.5A | 4 |
| Input Capacitance | CISS | | 770 | | pF | VGS=0V, VDS=25V, f=1.0MHz | 4 |
| Output Capacitance | COSS | | 580 | | pF | | 4 |
| Reverse Transfer Capacitance | CRSS | | 52 | | pF | | 4 |
| Total Gate Charge | QG | | 27 | | nC | VDS=520V, VGS=10V, ID=11A, IG=1mA (Note 1, 2) | 4 |
| Gate-Source Charge | QGS | | 5 | | nC | | 4 |
| Gate-Drain Charge | QGD | | 8 | | nC | | 4 |
| Turn-ON Delay Time | tD(ON) | | 11 | | ns | VDD=100V, VGS=10V, ID=11A, RG=25Ω (Note 1, 2) | 4 |
| Turn-ON Rise Time | tR | | 23 | | ns | | 4 |
| Turn-OFF Delay Time | tD(OFF) | | 82 | | ns | | 4 |
| Turn-OFF Fall Time | tF | | 47 | | ns | | 4 |
| Maximum Body-Diode Continuous Current | IS | | 11 | | A | | 4 |
| Maximum Body-Diode Pulsed Current | ISM | | 44 | | A | | 4 |
| Drain-Source Diode Forward Voltage | VSD | | 1.4 | | V | IS =11A, VGS=0V | 4 |
| Reverse Recovery Time | trr | | 360 | | ns | IS=11A, VGS=0V, di/dt=100A/μs | 4 |
| Reverse Recovery Charge | Qrr | | 4.6 | | μC | | 4 |
## CAD (KiCad official)
- Symbol: `11NM65L-TA3-T`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `11nm65l-ta3-t-etched.step` / `11nm65l-ta3-t-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `11nm65l-ta3-t.step` / `11nm65l-ta3-t.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UTC(Unisonic Tech) datasheet](docs/11nm65l-ta3-t-datasheet.pdf) (9 pp, sha256 `f53a53f6d992daf3`, retrieved 2026-11-05, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/11nm65l-ta3-t-datasheet.pdf)