11NM65L-TA3-T from UTC(Unisonic Tech), in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate terminal; the datasheet's absolute maximum gate-source voltage VGSS is ±30 V.
2	D	passive	Drain terminal; the datasheet rates the drain-source voltage VDSS at 650 V and continuous drain current ID at 11 A.
3	S	passive	Source terminal; the body-diode maximum continuous current IS is 11 A.

Key specifications

Parameter	Value
Manufacturer	UTC(Unisonic Tech)
Package	TO-220
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDSS			650	V		3
Gate-Source Voltage	VGSS	-30		30	V		3
Drain Current Continuous	ID			11	A	TC = 25°C	3
Pulsed Drain Current	IDM			44	A	Note 2 (repetitive, pulse width limited by Tj)	3
Avalanche Current	IAR			2.3	A	Note 2	3
Avalanche Energy Single Pulsed	EAS			415	mJ	Note 3: L = 157mH, IAS = 2.3A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C	3
Peak Diode Recovery dv/dt	dv/dt			5	V/ns	Note 4: ISD≤11A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C	3
Power Dissipation (TO-220/TO-262)	PD			100	W	Package TO-220/TO-262 (TO-263 listed with same value)	3
Junction Temperature	TJ			150	°C		3
Storage Temperature	TSTG	-55		150	°C		3
Junction to Ambient	θJA		62.5		°С/W	Package TO-220/TO-220F, TO-220F1/TO-220F2, TO-262/TO-263 group	3
Junction to Case	θJC		1.25		°С/W	Package TO-220/TO-262 (TO-263 listed with same value)	3
Drain-Source Breakdown Voltage	BVDSS		650		V	VGS=0V, ID=250µA	4
Drain-Source Leakage Current	IDSS		10		µA	VDS=650V, VGS=0V	4
Gate-Source Leakage Current	IGSS	-100		100	nA	VDS=0V, VGS=±30V	4
Gate Threshold Voltage	VGS(TH)	2.5		4.5	V	VDS= VGS, ID=250µA	4
Drain-Source On-State Resistance	RDS(ON)		0.43	0.52	Ω	VGS=10V, ID=5.5A	4
Input Capacitance	CISS		770		pF	VGS=0V, VDS=25V, f=1.0MHz	4
Output Capacitance	COSS		580		pF		4
Reverse Transfer Capacitance	CRSS		52		pF		4
Total Gate Charge	QG		27		nC	VDS=520V, VGS=10V, ID=11A, IG=1mA (Note 1, 2)	4
Gate-Source Charge	QGS		5		nC		4
Gate-Drain Charge	QGD		8		nC		4
Turn-ON Delay Time	tD(ON)		11		ns	VDD=100V, VGS=10V, ID=11A, RG=25Ω (Note 1, 2)	4
Turn-ON Rise Time	tR		23		ns		4
Turn-OFF Delay Time	tD(OFF)		82		ns		4
Turn-OFF Fall Time	tF		47		ns		4
Maximum Body-Diode Continuous Current	IS		11		A		4
Maximum Body-Diode Pulsed Current	ISM		44		A		4
Drain-Source Diode Forward Voltage	VSD		1.4		V	IS =11A, VGS=0V	4
Reverse Recovery Time	trr		360		ns	IS=11A, VGS=0V, di/dt=100A/μs	4
Reverse Recovery Charge	Qrr		4.6		μC		4

CAD (KiCad official)

Symbol: 11NM65L-TA3-T
Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
3D model: TO-220 (KiCad packages3D, STEP)
3D model files: 11nm65l-ta3-t-etched.step / 11nm65l-ta3-t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 11nm65l-ta3-t.step / 11nm65l-ta3-t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: UTC(Unisonic Tech) datasheet (9 pp, sha256 f53a53f6d992daf3, retrieved 2026-11-05, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

11NM65L-TA3-T

Verified 11NM65L-TA3-T

Verification log 1 record

3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

README