main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 1d ago
viewers 10n65: viewers · Ray 1d ago
10n65-hero.glb Publish 0.1.0 · Ray 1d ago
10n65-hero.overlay.json Publish 0.1.0 · Ray 1d ago
10n65.glb Publish 0.1.0 · Ray 1d ago
10n65.kicad_mod Publish 0.1.0 · Ray 1d ago
10n65.kicad_sym Publish 0.1.0 · Ray 1d ago
10n65.lbr Publish 0.1.0 · Ray 1d ago
10n65.step Publish 0.1.0 · Ray 1d ago
package.json Publish 0.1.0 · Ray 1d ago
page.json Set visibility: public · Ray 1d ago
README.md Publish 0.1.0 · Ray 1d ago

10N65

HXY MOSFET · MOSFETs · TO-252-2L

10N65 from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-source voltage is rated ±30 V (absolute maximum), and the device is driven with VGS = 10 V for the specified RDS(on) of 1.0 Ω maximum.
2 D passive Drain terminal; the device is rated for VDS = 650 V with continuous drain current ID of 10 A at TC = 25°C.
3 S passive Source terminal; reference for gate-source voltage and the source of the body diode, with continuous source current IS limited to 7 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 650 V VGS=0V,ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VGS=0V, VDS=650V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±30V, VDS=0A 2
Gate-Source Threshold Voltage VGS(th) 2 4 V VGS=VDS, ID=250μA 2
Drain-Source On Resistance RDS(ON) 0.85 1 Ω VGS=10V,ID=3.5A 2
Source-Drain Diode Forward Voltage VSD 1.4 V VGS=0V,IS=10A 2
Continuous Source Current Is 7 A 2
Pulsed Source Current lsm 28 Ns 2
Drain-Source Voltage VDS 650 V 1
Gate-Source Voltage VGS -30 30 V 1
Continuous Drain Current ID@TC=25°C 10 A VGS @ 10V, TC=25°C 1
Continuous Drain Current ID@TC=100°C 5.8 A VGS @ 10V, TC=100°C 1
Pulsed Drain Current IDM 40 A 1
Total Power Dissipation PD@TC=25°C 39 W TC=25°C 1
Storage Temperature Range TSTG -55 150 °C 1
Operating Junction Temperature Range TJ -55 150 °C 1
Thermal Resistance Junction-ambient RθJA 43.3 °C/W 1
Thermal Resistance Junction-Case RθJC 3.8 ℃/W 1

CAD (KiCad official)

  • Symbol: 10N65
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-252-2L (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 78c4f626a83719fd, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF