component
10N65
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown10N65
HXY MOSFET · MOSFETs · TO-252-2L
10N65 from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is rated ±30 V (absolute maximum), and the device is driven with VGS = 10 V for the specified RDS(on) of 1.0 Ω maximum. |
| 2 | D | passive | Drain terminal; the device is rated for VDS = 650 V with continuous drain current ID of 10 A at TC = 25°C. |
| 3 | S | passive | Source terminal; reference for gate-source voltage and the source of the body diode, with continuous source current IS limited to 7 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V,ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VGS=0V, VDS=650V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±30V, VDS=0A | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 2 | 4 | V | VGS=VDS, ID=250μA | 2 | |
| Drain-Source On Resistance | RDS(ON) | 0.85 | 1 | Ω | VGS=10V,ID=3.5A | 2 | |
| Source-Drain Diode Forward Voltage | VSD | 1.4 | V | VGS=0V,IS=10A | 2 | ||
| Continuous Source Current | Is | 7 | A | 2 | |||
| Pulsed Source Current | lsm | 28 | Ns | 2 | |||
| Drain-Source Voltage | VDS | 650 | V | 1 | |||
| Gate-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Continuous Drain Current | ID@TC=25°C | 10 | A | VGS @ 10V, TC=25°C | 1 | ||
| Continuous Drain Current | ID@TC=100°C | 5.8 | A | VGS @ 10V, TC=100°C | 1 | ||
| Pulsed Drain Current | IDM | 40 | A | 1 | |||
| Total Power Dissipation | PD@TC=25°C | 39 | W | TC=25°C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 43.3 | °C/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 3.8 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
10N65 - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-252-2L (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (7 pp, sha256
78c4f626a83719fd, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).