# 100N03

**HL** · MOSFETs · TO-252

100N03 from HL, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; the datasheet limits the gate-source voltage to ±20 V. |
| 2 | D | passive | Drain of the MOSFET; the datasheet rates drain-source voltage VDS at 30 V and continuous drain current ID at 100 A (TC=25°C). |
| 3 | S | passive | Source of the MOSFET; the datasheet gives no source-specific limit, and the body-diode forward current IS is rated at 50 A (TC=25°C). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HL |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 100 | A | TC=25°C | 1 |
| Continuous Drain Current | ID |  |  | 65 | A | TC=100°C | 1 |
| Pulsed Drain Current | IDM |  |  | 400 | A | Note a1: repetitive rating; pulse width limited by max junction temperature | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 95 | mJ | Note a2: TJ=25℃, VG=10V, RG=25Ω, L=0.5mH, IAS=18.4A | 1 |
| Power Dissipation | PD |  |  | 80 | W | TC = 25℃ | 1 |
| Operating junction and storage temperature | TJ, TSTG | -55 |  | 175 | ℃ |  | 1 |
| Maximum Temperature for Soldering | TL |  |  | 300 | ℃ |  | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 1.9 | ℃/W |  | 2 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 |  |  | V | VGS = 0V, ID = 250µA | 2 |
| Gate-body Leakage current | lGSS | -100 |  | 100 | nA | VDS = 0V, VGS = ±20V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS = 30V, VGS = 0V | 2 |
| Gate-Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS =VGS , ID = 250µA | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 3.5 | 4.7 | mΩ | VGS = 10V, ID = 30A | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 5.5 | 10 | mΩ | VGS = 4.5V, ID = 20A | 2 |
| Diode Forward Current | IS |  |  | 50 | A | TC=25℃ | 2 |
| Diode Pulse Current | ISM |  |  | 200 | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=30A | 2 |

## CAD (KiCad official)

- Symbol: `100N03`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `100n03-etched.step` / `100n03-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `100n03.step` / `100n03.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HL datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8602897491637784576) (8 pp, sha256 `a2825adcd05cb9e5`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/100n03-datasheet.pdf)