component
100N03
Public Made by Adomby adom
HL MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 3d ago |
| viewers | 3d ago |
| 100n03-etched.glb | 3d ago |
| 100n03-etched.step | 3d ago |
| 100n03-hero.glb | 3d ago |
| 100n03-hero.overlay.json | 3d ago |
| 100n03.glb | 3d ago |
| 100n03.kicad_mod | 3d ago |
| 100n03.kicad_sym | 3d ago |
| 100n03.lbr | 3d ago |
| 100n03.step | 3d ago |
| package.json | 3d ago |
| page.json | 3d ago |
| README.md | 3d ago |
100N03
HL · MOSFETs · TO-252
100N03 from HL, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; the datasheet limits the gate-source voltage to ±20 V. |
| 2 | D | passive | Drain of the MOSFET; the datasheet rates drain-source voltage VDS at 30 V and continuous drain current ID at 100 A (TC=25°C). |
| 3 | S | passive | Source of the MOSFET; the datasheet gives no source-specific limit, and the body-diode forward current IS is rated at 50 A (TC=25°C). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HL |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 100 | A | TC=25°C | 1 | ||
| Continuous Drain Current | ID | 65 | A | TC=100°C | 1 | ||
| Pulsed Drain Current | IDM | 400 | A | Note a1: repetitive rating; pulse width limited by max junction temperature | 1 | ||
| Single Pulse Avalanche Energy | EAS | 95 | mJ | Note a2: TJ=25℃, VG=10V, RG=25Ω, L=0.5mH, IAS=18.4A | 1 | ||
| Power Dissipation | PD | 80 | W | TC = 25℃ | 1 | ||
| Operating junction and storage temperature | TJ, TSTG | -55 | 175 | ℃ | 1 | ||
| Maximum Temperature for Soldering | TL | 300 | ℃ | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 1.9 | ℃/W | 2 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | V | VGS = 0V, ID = 250µA | 2 | ||
| Gate-body Leakage current | lGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 30V, VGS = 0V | 2 | ||
| Gate-Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS =VGS , ID = 250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | 3.5 | 4.7 | mΩ | VGS = 10V, ID = 30A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 5.5 | 10 | mΩ | VGS = 4.5V, ID = 20A | 2 | |
| Diode Forward Current | IS | 50 | A | TC=25℃ | 2 | ||
| Diode Pulse Current | ISM | 200 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=30A | 2 |
CAD (KiCad official)
- Symbol:
100N03 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
100n03-etched.step/100n03-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);100n03.step/100n03.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HL datasheet (8 pp, sha256
a2825adcd05cb9e5, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).