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Contents

README

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TK6R9P08QM

TOSHIBA · MOSFETs · DPAK

TK6R9P08QM from TOSHIBA, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Enhancement-mode control terminal; Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.5 mA). Absolute maximum VGSS = ±20 V. Drive at VGS = 10 V for rated RDS(on) = 5.5 mΩ typ.
2 D passive Drain (also the DPAK heatsink/thermal tab). Rated VDSS = 80 V, continuous ID = 62 A (silicon limit) / 83 A (Tc = 25 °C, package limit), pulsed IDP = 210 A. Channel-to-case thermal resistance Rth(ch-c) = 1.67 °C/W max.
3 S passive Source. Common return for gate drive and drain current; body-diode anode (intrinsic parasitic diode from S to D).

Key specifications

Parameter Value
Manufacturer TOSHIBA
Package DPAK
Category Transistors/Thyristors
Pins 3

Ordering variants

Same part, different packaging or reel option.

  • TK6R9P08QM

CAD (KiCad official)

  • Symbol: TK6R9P08QM
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: DPAK (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TOSHIBA datasheet (None pp, sha256 91e300d25293cf97, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF