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Contents

README

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TK560P60Y

TOSHIBA · MOSFETs · DPAK

TK560P60Y from TOSHIBA, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Insulated MOS gate; controls channel conduction between drain and source. Absolute maximum VGSS = ±30 V; enhancement threshold Vth = 3 to 4 V (VDS = 10 V, ID = 0.24 mA). ESD sensitive.
2 D passive Drain. High-voltage terminal of the N-channel MOSFET, also connected to the tab (heat-sinking pad). Rated VDSS = 600 V, ID = 7 A (Tc = 25 °C), IDP = 28 A pulsed.
3 S passive Source. Return terminal of the N-channel MOSFET channel and cathode reference for the intrinsic body diode. Body diode VDSF ≈ -1.7 V max at IDR = 7 A.

Key specifications

Parameter Value
Manufacturer TOSHIBA
Package DPAK
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: TK560P60Y
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: DPAK (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TOSHIBA datasheet (None pp, sha256 62b9bc544751c7f3, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF