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SUD20N10-66L-T1-GE3-VB

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by Ray

VBsemi Elec MOSFETs, TO-252. Datasheet-verified pinout, KiCad symbol/footprint/3D.

componenttransistors-thyristorssud20n10-66l-t1-ge3-vb
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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SUD20N10-66L-T1-GE3-VB

VBsemi Elec · MOSFETs · TO-252

SUD20N10-66L-T1-GE3-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Insulated gate terminal controlling drain-source channel conduction. Absolute maximum VGS = ±20 V; typical VGS(th) = 1.0-3.5 V; drive at VGS = 10 V for full enhancement (RDS(on) = 0.114 Ω typ).
2 D passive Drain. Also electrically connected to the exposed tab of the TO-252 package for thermal dissipation. Rated VDS = 100 V, ID = 15 A continuous (TC = 25 °C), pulsed IDM = 40 A.
3 S passive Source. Reference terminal for the MOSFET; internal body diode anode with VSD = 0.9 V typ at IF = 3 A. Continuous source (diode conduction) current IS = 3 A.
4 D (Tab) passive Exposed thermal tab, internally connected to Drain. Provides low junction-to-case thermal resistance (RthJC = 0.85 °C/W typ) and is intended to be soldered to a copper heatsink pad.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • SUD20N10-66L-T1-GE3-VB

CAD (KiCad official)

  • Symbol: SUD20N10-66L-T1-GE3-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (None pp, sha256 5bf54a19405d25f6, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF