component

STS8C5H30L-VB

Public Unreviewed

by Ray

VBsemi Elec MOSFETs, SO-8. Datasheet-verified pinout, KiCad symbol/footprint/3D.

componenttransistors-thyristorssts8c5h30l-vb
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads on click. Unloads when scrolled away or the tab is hidden.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads on click. Unloads when scrolled away or the tab is hidden.

PCB Footprint

Open full view ↗
Loads on click. Unloads when scrolled away or the tab is hidden.

Datasheet

Open in new tab ↗
Loads on click. Unloads when scrolled away or the tab is hidden.
Download PDF
Contents

README

markdown

STS8C5H30L-VB

VBsemi Elec · MOSFETs · SO-8

STS8C5H30L-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of Q1 (N-channel MOSFET). Body-diode anode; carries source current up to 3.6 A continuous (5.4 A body diode) at TC = 25 °C.
2 G1 input Gate of Q1 (N-channel MOSFET). VGS rated ±20 V; VGS(th) typ 1 V (min 1 V, max 2.2 V) at ID = 250 µA.
3 S2 passive Source of Q2 (P-channel MOSFET). Body-diode cathode; carries source current up to -3.6 A continuous (-5.6 A body diode) at TC = 25 °C.
4 G2 input Gate of Q2 (P-channel MOSFET). VGS rated ±20 V; VGS(th) typ -0.9 V (max -2.5 V) at ID = -250 µA.
5 D2 passive Drain of Q2 (P-channel MOSFET). VDS = -30 V max; continuous ID = -10.5 A at TC = 25 °C; RDS(on) = 0.021 Ω @ VGS = -10 V. Ganged with pin 6 on-die.
6 D2 passive Drain of Q2 (P-channel MOSFET). Second drain pad; ganged with pin 5 on-die to reduce lead resistance and improve thermal dissipation.
7 D1 passive Drain of Q1 (N-channel MOSFET). VDS = 30 V max; continuous ID = 11 A at TC = 25 °C; RDS(on) = 0.011 Ω @ VGS = 10 V. Ganged with pin 8 on-die.
8 D1 passive Drain of Q1 (N-channel MOSFET). Second drain pad; ganged with pin 7 on-die to reduce lead resistance and improve thermal dissipation.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

CAD (KiCad official)

  • Symbol: STS8C5H30L-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (14 pp, sha256 5d6c11fc64ae2814, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF