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Contents

README

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STGD6M65DF2

STMicroelectronics · IGBT Transistors / Modules · TO-252

STGD6M65DF2 from STMicroelectronics, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Insulated-gate control terminal of the IGBT. Gate-emitter threshold voltage VGE(th) typ. 6 V (5 V min, 7 V max); absolute max gate-emitter voltage VGE = +/-20 V. Drive typically at VGE = 15 V for full enhancement.
2 C passive Collector. Also connected to the DPAK TAB (heat-sinking tab). Rated VCES = 650 V, continuous IC = 12 A at TC = 25 degC (6 A at TC = 100 degC), pulsed ICP = 24 A. Anode of the internal antiparallel freewheeling diode is the emitter; cathode is the collector.
3 E passive Emitter. Power return terminal of the IGBT and anode of the internal antiparallel diode. IF continuous = 12 A at TC = 25 degC (6 A at TC = 100 degC); pulsed IFP = 24 A; VF typ. 2.6 V at IF = 6 A.
TAB C passive Metal heat-sink tab, electrically connected to the collector (pin 2). Used for thermal dissipation to the PCB copper pour; RthJC = 1.7 degC/W.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-252
Category Transistors/Thyristors
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • STGD6M65DF2

CAD (KiCad official)

  • Symbol: STGD6M65DF2
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (18 pp, sha256 3456c456d698fc5c, retrieved 2026-08-17, tier: manufacturer)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF