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STD30NF06LT4-VB

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by Ray

VBsemi Elec MOSFETs, TO-252. Datasheet-verified pinout, KiCad symbol/footprint/3D.

componenttransistors-thyristorsstd30nf06lt4-vb
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3D Model

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Symbol & Footprint

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PCB Footprint

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Datasheet

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Contents

README

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STD30NF06LT4-VB

VBsemi Elec · MOSFETs · TO-252

STD30NF06LT4-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Insulated-gate control terminal. Gate-source voltage rated ±20 V; gate threshold VGS(th) = 1.0-3.0 V (typ 2.0 V). Recommended drive VGS = 10 V for full enhancement (rDS(on) = 0.025 Ω).
2 D passive Drain. Power switching terminal, also connected to the exposed mounting tab for thermal dissipation. VDS breakdown = 60 V min; ID = 45 A continuous at TC = 25 °C; IDM = 100 A pulsed.
3 S passive Source. Power return terminal. Internal body diode is present between source (anode) and drain (cathode): VSD ≈ 1.0-1.5 V at IF = 15 A, trr ≈ 30 ns.
4 D passive Drain tab (exposed thermal pad). Electrically identical to pin 2 (drain); provides the primary thermal path to the PCB copper (RthJC = 3.2 °C/W typ).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • STD30NF06LT4-VB

CAD (KiCad official)

  • Symbol: STD30NF06LT4-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (None pp, sha256 055038a53fed7a55, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF