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Contents

README

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STD25N10F7-VB

VBsemi Elec · MOSFETs · TO-252

STD25N10F7-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Insulated gate of the N-channel MOSFET; VGS(th) = 1-3 V, VGS abs max = ±20 V. Drives the channel between drain and source.
2 D passive Drain. High-side power terminal of the N-channel MOSFET; VDS abs max = 100 V, continuous ID = 40 A at TC = 25 °C. Electrically connected to the exposed tab of the TO-252 package.
3 S passive Source. Low-side power terminal of the N-channel MOSFET; internally tied to the anode of the body diode (VSD ≈ 1.0 V @ IF = 30 A). Continuous source current IS = 40 A.
4 D passive Drain tab. Exposed thermal/electrical tab of the TO-252 package, electrically identical to pin 2 (drain). Provides the primary thermal path (RthJC = 1.4 °C/W).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • STD25N10F7-VB

CAD (KiCad official)

  • Symbol: STD25N10F7-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (None pp, sha256 0a7978a82c45eee7, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF