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SQ1470EH-T1-GE3-VB

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by Ray

VBsemi Elec MOSFETs, SC-70-6. Datasheet-verified pinout, KiCad symbol/footprint/3D.

componenttransistors-thyristorssq1470eh-t1-ge3-vb
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3D Model

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Symbol & Footprint

Schematic Symbol

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PCB Footprint

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Datasheet

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Contents

README

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SQ1470EH-T1-GE3-VB

VBsemi Elec · MOSFETs · SC-70-6

SQ1470EH-T1-GE3-VB from VBsemi Elec, in a SC-70-6. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain. One of four drain leads connected internally to the MOSFET drain to increase current-carrying and thermal capability. VDS rated 30 V, continuous ID up to 4.5 A at TC = 25 °C.
2 D passive Drain (paralleled with pins 1, 5, 6). VDS = 30 V max, RDS(on) = 0.023 Ω typical at VGS = 10 V.
3 G input Gate. Isolated MOSFET gate for control of the drain-source channel. Absolute maximum VGS = ±20 V; gate-source threshold voltage VGS(th) = 0.5 to 2.5 V; typical gate resistance Rg = 12.6 Ω at 1 MHz.
4 S passive Source. MOSFET source terminal and anode of the intrinsic body diode (body diode VSD = 0.82 V typ, 1.2 V max at IS = 4.4 A).
5 D passive Drain (paralleled with pins 1, 2, 6). VDS = 30 V max.
6 D passive Drain (paralleled with pins 1, 2, 5). VDS = 30 V max.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SC-70-6
Category Transistors/Thyristors
Pins 6

Ordering variants

Same part, different packaging or reel option.

  • SQ1470EH-T1-GE3-VB

CAD (KiCad official)

  • Symbol: SQ1470EH-T1-GE3-VB
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SC-70-6 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (None pp, sha256 903e30707bc41971, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF