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SPD02N60S5-VB

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by Ray

VBsemi Elec MOSFETs, TO-252. Datasheet-verified pinout, KiCad symbol/footprint/3D.

componenttransistors-thyristorsspd02n60s5-vb
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3D Model

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Symbol & Footprint

Schematic Symbol

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PCB Footprint

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Datasheet

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Contents

README

markdown

SPD02N60S5-VB

VBsemi Elec · MOSFETs · TO-252

SPD02N60S5-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Insulated control terminal of the N-channel MOSFET. VGS(th) = 2.5 V to 5.0 V; absolute maximum VGS = ±30 V. Drive to ~10 V to fully enhance (RDS(on) = 2.1 Ω typ).
2 D passive Drain. High-voltage terminal of the MOSFET; also the cathode of the intrinsic body diode. VDS = 650 V max, continuous ID = 4.5 A at TC = 25 °C. Electrically connected to the exposed TO-252 tab (heat-sinking pad).
3 S passive Source. Low-side terminal of the MOSFET and anode of the intrinsic body diode. Continuous IS = 4 A max; VSD = 1.5 V max at IS = 3.2 A.
TAB D passive Exposed metal tab on the back of the TO-252 package; electrically the Drain and the primary thermal path (RthJC = 2.1 °C/W). Solder to a copper heat-spreading pad on the PCB.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • SPD02N60S5-VB

CAD (KiCad official)

  • Symbol: SPD02N60S5-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (None pp, sha256 6b257a2b8022816a, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF