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Contents

README

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SI3867DV-T1-GE3-VB

VBsemi Elec · MOSFETs · TSOP-6

SI3867DV-T1-GE3-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain. Tied internally to pins 1, 2, 5, 6 (ganged for current-handling and heat-sinking). Rated VDS = -30 V, continuous ID up to -4.8 A at TC = 25 °C.
2 D passive Drain. Tied internally to pins 1, 2, 5, 6. Ganged with other drain pins for current and thermal performance.
3 G input Gate. Drive input for the P-channel MOSFET. VGS max = ±20 V; VGS(th) typ. -0.5 to -2.0 V; recommended VGS = -4.5 V or -10 V for full enhancement.
4 S passive Source. Reference terminal of the P-channel MOSFET (typically tied to the positive supply in a high-side load switch). Body diode anode is internally connected to source.
5 D passive Drain. Tied internally to pins 1, 2, 5, 6. Ganged with other drain pins for current and thermal performance.
6 D passive Drain. Tied internally to pins 1, 2, 5, 6. Ganged with other drain pins for current and thermal performance.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TSOP-6
Category Transistors/Thyristors
Pins 6

Ordering variants

Same part, different packaging or reel option.

  • SI3867DV-T1-GE3-VB

CAD (KiCad official)

  • Symbol: SI3867DV-T1-GE3-VB
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (None pp, sha256 883d1bc05f996857, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF