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Contents

README

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SE2N65

SINO IC · MOSFETs · TO-252

SE2N65 from SINO IC, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Insulated MOSFET control terminal. VGS(th) = 2.5-4.5 V; absolute maximum VGS = ±30 V; gate-body leakage IGSS = 100 nA max @ VGS = 30 V. Drive with VGS = 10 V for RDS(on) = 3.5 Ω typ.
2 D passive Drain. Power terminal, typically connected to the higher potential in an N-channel high-side/low-side switching topology. BVDSS = 650 V; IDSS = 1 µA max @ VDS = 650 V. Continuous ID = 2 A, pulsed 8 A. Electrically common to the mounting tab.
3 S passive Source. Power/return terminal and reference for VGS. Body diode: VSD = 1.4 V max @ IS = 2 A, trr = 300 ns typ, QRR = 2.2 µC.

Key specifications

Parameter Value
Manufacturer SINO IC
Package TO-252
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: SE2N65
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SINO IC datasheet (None pp, sha256 613381f4720344ee, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF