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Contents

README

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QS6K1TR-VB

VBsemi Elec · MOSFETs · TSOP-6

QS6K1TR-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G1 input Gate of MOSFET 1. Insulated gate control input; VGS(th) 0.4 V to 1.5 V (typ), absolute maximum VGS = ±12 V. Drive with 4.5 V or higher for full enhancement (RDS(on) = 22 mΩ).
2 S2 passive Source of MOSFET 2. Low-side/source terminal of the second N-channel MOSFET; body-diode anode of MOSFET 2.
3 G2 input Gate of MOSFET 2. Insulated gate control input; VGS(th) 0.4 V to 1.5 V (typ), absolute maximum VGS = ±12 V. Drive with 4.5 V or higher for full enhancement (RDS(on) = 22 mΩ).
4 D2 passive Drain of MOSFET 2. High-side/drain terminal of the second N-channel MOSFET; body-diode cathode of MOSFET 2. VDS max = 20 V, ID up to 6.0 A at TC = 25 °C.
5 S1 passive Source of MOSFET 1. Low-side/source terminal of the first N-channel MOSFET; body-diode anode of MOSFET 1.
6 D1 passive Drain of MOSFET 1. High-side/drain terminal of the first N-channel MOSFET; body-diode cathode of MOSFET 1. VDS max = 20 V, ID up to 6.0 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TSOP-6
Category Transistors/Thyristors
Pins 6

Ordering variants

Same part, different packaging or reel option.

  • QS6K1TR-VB

CAD (KiCad official)

  • Symbol: QS6K1TR-VB
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (None pp, sha256 1c193e17a710efb3, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF