PJM80N68TE from PJSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	Gate	input	Gate terminal of the N-channel enhancement mode MOSFET. Controls the drain-source conduction; VGS(th) typ 2.8V (min 2V, max 4V). Absolute maximum VGS is ±20V.
2	Drain	passive	Drain terminal of the N-channel MOSFET. Rated VDS=68V, ID=80A continuous (IDM=320A pulsed). RDS(on) typ 7.5mΩ / max 8.6mΩ @VGS=10V, ID=30A. Also electrically connected to the TO-252 tab.
3	Source	passive	Source terminal of the N-channel MOSFET. Body-diode forward voltage VSD max 1.2V @IS=30A, VGS=0V; continuous IS up to 80A.

Key specifications

Parameter	Value
Manufacturer	PJSEMI
Package	TO-252
Category	Transistors/Thyristors
Pins	3

Ordering variants

Same part, different packaging or reel option.

PJM80N68TE

CAD (KiCad official)

Symbol: PJM80N68TE
Footprint: Package_TO_SOT_SMD:TO-252-2
3D model: TO-252 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: PJSEMI datasheet (None pp, sha256 9ed7f9abaeec235a, retrieved 2026-08-17, tier: lcsc)
Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF