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NVD5414NT4G-VB

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by Ray

VBsemi Elec MOSFETs, TO-252. Datasheet-verified pinout, KiCad symbol/footprint/3D.

componenttransistors-thyristorsnvd5414nt4g-vb
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3D Model

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Symbol & Footprint

Schematic Symbol

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PCB Footprint

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Datasheet

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Contents

README

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NVD5414NT4G-VB

VBsemi Elec · MOSFETs · TO-252

NVD5414NT4G-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Insulated gate input controlling the MOSFET channel. VGS absolute maximum ±20 V; typical gate threshold VGS(th) = 2.0 V (1.0-3.0 V). Total gate charge Qg ≈ 11 nC at VGS = 10 V.
2 D passive Drain. High-side power terminal of the N-channel MOSFET. Rated V(BR)DSS = 60 V, continuous ID = 45 A (TC = 25 °C). Electrically connected to the exposed tab (pin 4) of the TO-252 package.
3 S passive Source. Low-side power terminal of the N-channel MOSFET. Continuous source (body-diode) current IS = 23 A; diode forward voltage VSD ≈ 1.0 V typical at IF = 15 A.
4 D (TAB) passive Drain tab. Exposed metal pad on the back of the TO-252 package used for PCB heat-sinking; internally connected to the Drain (pin 2). Solder to a copper pour for thermal dissipation (RthJC = 3.2 °C/W typical).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • NVD5414NT4G-VB

CAD (KiCad official)

  • Symbol: NVD5414NT4G-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (None pp, sha256 619572703e282dca, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF