component
ncv33172dr2g
Public Unreviewedby Ray
onsemi Operational Amplifier, SOIC-8. Datasheet-verified pinout, KiCad symbol/footprint/3D.
3D Model
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README
markdownNCV33172DR2G
onsemi · Operational Amplifier · SOIC-8
NCV33172DR2G from onsemi, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Output 1 | output | Op-amp channel 1 output. All-NPN output stage; typical swing to within ~0.8 V of both rails with a 10 kΩ load; sources typ 5 mA, sinks typ 27 mA (min 15 mA); output short-circuit protected. |
| 2 | Inv. Input 1 | input | Inverting (−) input of op-amp channel 1. High-impedance Darlington PNP input stage; typ input bias current 20 nA, typ differential input resistance 300 MΩ, input capacitance 0.8 pF. |
| 3 | Noninv. Input 1 | input | Non-inverting (+) input of op-amp channel 1. Common-mode range extends from VEE up to (VCC − 1.8 V) at 25 °C; ESD diodes provide input protection on the dual/quad devices. |
| 4 | VEE | power_in | Negative supply / ground. Single-supply operation ties this to GND (VCC = 3.0 V to 44 V); split-supply operation uses ±1.5 V to ±22 V. Absolute-max supply span |
| 5 | Noninv. Input 2 | input | Non-inverting (+) input of op-amp channel 2. Same input characteristics as channel 1: CM range VEE to (VCC − 1.8 V), typ IB = 20 nA, 300 MΩ differential input resistance. |
| 6 | Inv. Input 2 | input | Inverting (−) input of op-amp channel 2. High-impedance Darlington PNP input stage; matches channel 1 for offset, bias, and noise characteristics (VIO typ 2.0 mV, en typ 32 nV/√Hz at 1 kHz). |
| 7 | Output 2 | output | Op-amp channel 2 output. Same drive as Output 1: capacitive drive capability 0 pF to 500 pF, GBW 1.8 MHz, SR 2.1 V/µs, channel separation typ 120 dB at 10 kHz. |
| 8 | VCC | power_in | Positive supply rail, 3.0 V to 44 V single-supply or +1.5 V to +22 V split-supply. Per-amplifier quiescent current typ 220 µA at ±15 V (typ 180 µA at +5 V). Decouple to VEE with a low-ESR capacitor placed adjacent to the pin. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOIC-8 |
| Category | Op-amp/Cmp |
| Pins | 8 |
Ordering variants
NCV33172DR2GNCV33172DR2GDGNCV33172DR2GVDR2GNCV33172DR2GVDGNCV33172DR2GPG
CAD (KiCad official)
- Symbol:
NCV33172DR2G - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (None pp, sha256
f1e9ff0b61491b0b, retrieved 2026-08-17, tier: manufacturer) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).
Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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