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Contents

README

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MJD45H11T4

STMicroelectronics · Bipolar Transistors - BJT · DPAK

MJD45H11T4 from STMicroelectronics, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base terminal of the PNP BJT. Vbe(sat) max = -1.5 V at Ic = -8 A, Ib = -0.8 A. Drives collector current via hFE (min 60 at Ic = -2 A, Vce = -1 V).
2 C passive Collector terminal of the PNP BJT, electrically connected to the DPAK tab. Max Vceo = -80 V, Ic = -8 A continuous / -16 A peak, Vce(sat) max = -1 V at Ic = -8 A.
3 E passive Emitter terminal of the PNP BJT. Reference terminal for Vbe and Vce measurements.
TAB C passive Exposed thermal/electrical tab, internally shorted to the collector (pin 2). Rth(j-c) = 6.25 °C/W; solder to a copper pour for heat dissipation.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package DPAK
Category Transistors
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • MJD45H11T4

CAD (KiCad official)

  • Symbol: MJD45H11T4
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: DPAK (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (12 pp, sha256 f7440fb79093c3c0, retrieved 2026-08-17, tier: manufacturer)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF