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Contents

README

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KIA2806AP

KIA Semicon Tech · MOSFETs · TO-220

KIA2806AP from KIA Semicon Tech, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. MOSFET control terminal; VGS(th) = 2.0-4.0 V (typ. 3.0 V). Absolute maximum VGSS = ±25 V. Drive with VGS = 10 V for rated RDS(on) of 3.5 mΩ typ.
2 D passive Drain. High-current N-MOSFET drain terminal; VDSS = 60 V, ID = 150 A at TC=25°C. Body diode anode is Source, cathode is Drain (VSD typ. 0.8 V at 60 A).
3 S passive Source. N-MOSFET source terminal; typically tied to system ground or the low-side rail in switching topologies. Serves as reference for VGS gate drive.

Key specifications

Parameter Value
Manufacturer KIA Semicon Tech
Package TO-220
Category Transistors/Thyristors
Pins 3

Ordering variants

Same part, different packaging or reel option.

  • KIA2806AP

CAD (KiCad official)

  • Symbol: KIA2806AP
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KIA Semicon Tech datasheet (None pp, sha256 3c11264f8a1bbd5a, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF