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Contents

README

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IRFS7434TRLPBF

Infineon Technologies · MOSFETs · D2PAK

IRFS7434TRLPBF from Infineon Technologies, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Insulated MOSFET gate controlling channel conduction. V_GS(th) = 2.2-3.9 V (typ. 3.0 V); absolute V_GS rating ±20 V. Internal gate resistance R_G ≈ 2.1 Ω typ. Drive with V_GS = 10 V for rated R_DS(on) of ≤1.6 mΩ.
2 D passive Drain. High-side power terminal of the N-channel HEXFET. V_(BR)DSS ≥ 40 V; continuous I_D up to 320 A (silicon limited) / 195 A (package/bond-wire limited) at T_C = 25 °C. Electrically common with the exposed metal tab (heat-sink).
3 S passive Source. Low-side power terminal of the N-channel HEXFET and reference for V_GS. Also the anode of the intrinsic body diode (V_SD ≈ 0.9 V typ., 1.3 V max at I_S = 100 A) used for reverse conduction / synchronous rectification.
TAB D passive Exposed metal heat-sink tab, electrically tied to Drain. Provides the primary thermal path (R_thJC ≈ 0.5 °C/W max) - solder to a copper pour for heat removal and drain current handling.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package D2PAK
Category Transistors/Thyristors
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • IRFS7434PbF
  • IRFS7434TRLPBF
  • IRFS7434TRRPBF
  • IRFSL7434PbF

CAD (KiCad official)

  • Symbol: IRFS7434TRLPBF
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: D2PAK (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (12 pp, sha256 4e0a6ba3dd0fbbd3, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF