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Contents

README

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IRFB7740PBF

Infineon Technologies · MOSFETs · TO-220AB

IRFB7740PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Insulated MOSFET control terminal; drive with VGS up to ±20V (typ. VGS(th) 2.1-3.7V, use VGS = 10V for full enhancement to RDS(on) typ. 6.0 mΩ). Total gate charge Qg typ. 81 nC at ID = 52A, VDS = 38V.
2 D passive Drain. Power terminal, electrically connected to the TO-220AB metal tab (heatsink). VDSS = 75V max, continuous ID = 87A at TC = 25°C (62A at TC = 100°C), pulsed IDM = 275A. Body diode anode is Source, cathode is Drain (VSD max 1.2V at IS = 52A).
3 S passive Source. Power return terminal and anode of the integral body diode. Continuous IS = 87A, pulsed ISM = 275A. Reference node for VGS and VDS measurements.
TAB D passive Metal mounting tab, internally connected to the Drain (pin 2). Used for heatsinking; RθJC = 1.05 °C/W max, RθCS = 0.50 °C/W with flat greased surface. Mounting torque 10 lbf·in (1.1 N·m) with 6-32 or M3 screw.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220AB
Category Transistors/Thyristors
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • IRFB7740PbF

CAD (KiCad official)

  • Symbol: IRFB7740PBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (10 pp, sha256 6d393c2840083f57, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF