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IRF4104PBF-VB

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by Ray

VBsemi Elec MOSFETs, TO-220AB. Datasheet-verified pinout, KiCad symbol/footprint/3D.

componenttransistors-thyristorsirf4104pbf-vb
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3D Model

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Symbol & Footprint

Schematic Symbol

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PCB Footprint

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Datasheet

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Contents

README

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IRF4104PBF-VB

VBsemi Elec · MOSFETs · TO-220AB

IRF4104PBF-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Insulated MOSFET control terminal. Absolute maximum VGS = ±20 V; typical VGS(th) = 1.2 V to 2.5 V (VDS = VGS, ID = 250 µA). Gate resistance Rg ≈ 0.85 Ω typ.
2 D passive Drain. N-channel MOSFET drain, also electrically connected to the metal tab. Absolute maximum VDS = 40 V; continuous ID = 110 A at TC = 25 °C; pulsed IDM = 270 A.
3 S passive Source. N-channel MOSFET source. Body diode from Source to Drain (VSD ≈ 0.8 V typ. at IS = 20 A, IS = 110 A continuous at TC = 25 °C).
TAB D passive Heatsink tab, internally connected to the Drain. Used for thermal dissipation (RthJC = 0.33 °C/W typ.).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220AB
Category Transistors/Thyristors
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • IRF4104PBF-VB

CAD (KiCad official)

  • Symbol: IRF4104PBF-VB
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (None pp, sha256 115af3893e73b834, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF