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IR2104 Half-Bridge Gate Driver

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by Ray

600 V half-bridge MOSFET/IGBT gate driver with a single input and shutdown.

gate-driverhalf-bridgehigh-sidebootstrapinfineonsoic-8
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IR2104

Infineon · Gate Driver · SOIC-8

The IR2104 is a 600 V half-bridge gate driver for MOSFETs and IGBTs. A single logic input (with a separate shutdown) drives both the high-side and low-side outputs with matched propagation delay and internal dead time, using a bootstrap capacitor to supply the floating high-side gate. It is used in motor drives, DC-DC converters, and class-D stages.

Pinout

Pin Name Type Function
1 VCC power_in Low-side and logic fixed supply. Recommended operating range 10 V to 20 V (abs max 25 V). Undervoltage lockout thresholds VCCUV+ 8.9 V typ / VCCUV- 8.2 V typ. Quiescent supply current IQCC 150 µA typ.
2 IN input Logic input for high- and low-side gate driver outputs (HO and LO), in phase with HO. CMOS/LSTTL compatible down to 3.3 V logic. VIH ≥ 3 V, VIL ≤ 0.8 V (over VCC = 10-20 V). Input bias IIN+ 3 µA typ at VIN = 5 V.
3 /SD input Active-low shutdown input; when asserted turns off both HO and LO outputs. Shutdown propagation delay tsd 160 ns typ. VSD,TH+ ≥ 3 V, VSD,TH- ≤ 0.8 V. Referenced to COM.
4 COM power_in Low-side return / logic ground. Reference for VCC, IN, /SD, and LO. All voltage parameters in the datasheet are referenced to COM.
5 LO output Low-side gate drive output, referenced to COM. Drives the gate of the low-side N-channel MOSFET/IGBT. Peak source/sink 130 mA / 270 mA. Turn-on/off propagation delays 680 ns / 150 ns typ.
6 VS power_in High-side floating supply return; connect to the source of the high-side MOSFET (switch node). Tolerates negative transients; operational for VS -5 V to +600 V. Reference for HO and VB.
7 HO output High-side gate drive output, referenced to VS. Drives the gate of the high-side N-channel MOSFET/IGBT. In phase with IN. Peak source/sink 130 mA / 270 mA. Swings between VS and VB.
8 VB power_in High-side floating supply (bootstrap). Connect a bootstrap capacitor between VB and VS, charged from VCC through a bootstrap diode. Recommended VB = VS+10 V to VS+20 V, absolute max 625 V.

Key specifications

Parameter Value
Type 600 V half-bridge gate driver
Output current 210 mA source / 360 mA sink
Offset voltage Up to 600 V (high side)
Inputs Single IN + active-low shutdown
Dead time Internal (~520 ns)
Supply voltage 10 V to 20 V
Operating temperature -40 C to 125 C

Ordering variants

Same part, different packaging or reel option.

  • IR2104
  • IR2104PbF
  • IR2104S
  • IR2104SPbF

CAD (KiCad official)

  • Symbol: ir2104.kicad_sym
  • Footprint: ir2104.kicad_mod
  • 3D model: SOIC-8 body from KiCad Package_SO/SOIC-8_3.9x4.9mm_P1.27mm.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon datasheet (14 pp, sha256 3b7877fc162f31e4, retrieved 2026-08-17, tier: manufacturer)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF