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IPD50N04S4L-08-VB

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by Ray

VBsemi Elec MOSFETs, TO-252. Datasheet-verified pinout, KiCad symbol/footprint/3D.

componenttransistors-thyristorsipd50n04s4l-08-vb
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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IPD50N04S4L-08-VB

VBsemi Elec · MOSFETs · TO-252

IPD50N04S4L-08-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Control terminal of the N-channel MOSFET. VGS(th) = 1.2 V to 2.5 V (ID = 250 µA, VDS = VGS); VGS absolute maximum = ±25 V. Typical gate resistance Rg = 0.85 Ω @ 1 MHz.
2 D passive Drain. Also electrically connected to the exposed tab of the TO-252 package. VDS absolute maximum = 40 V; continuous ID = 85 A at TC = 25 °C; RDS(on) = 5.0 mΩ typical @ VGS = 10 V, ID = 30 A. Body diode cathode.
3 S passive Source. Return terminal for drain current. Body diode anode; continuous source-drain diode current IS = 110 A at TC = 25 °C, VSD ≈ 0.8 V typical at IS = 20 A.
4 D passive Drain (exposed thermal tab of the TO-252 package). Electrically the same node as pin 2; provides the primary thermal path with RthJC = 0.33 °C/W typical.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • IPD50N04S4L-08-VB

CAD (KiCad official)

  • Symbol: IPD50N04S4L-08-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (None pp, sha256 a9740dc12dc1f9b3, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF