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README

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INA2180A1IDGKR

Texas Instruments · Current-Sensing Amplifiers · VSSOP-8

INA2180A1IDGKR from Texas Instruments, in a VSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 OUT1 output Channel 1 analog output voltage. Delivers the amplified sense-resistor voltage (gain = 20 V/V) referenced to GND, with a 2 V/µs slew rate. Drive an ADC or comparator input.
2 IN-1 input Channel 1 current-sense amplifier negative input. Connect to the load side of the sense resistor for high-side sensing, or the ground side for low-side sensing. Common-mode range -0.2 V to +26 V.
3 IN+1 input Channel 1 current-sense amplifier positive input. Connect to the bus/supply side of the sense resistor for high-side sensing, or the load side for low-side sensing. Common-mode range -0.2 V to +26 V.
4 GND power_in Analog ground reference for both channels. Connect to the system analog ground plane.
5 IN+2 input Channel 2 current-sense amplifier positive input. Connect to the bus/supply side of the sense resistor for high-side sensing, or the load side for low-side sensing. Common-mode range -0.2 V to +26 V.
6 IN-2 input Channel 2 current-sense amplifier negative input. Connect to the load side of the sense resistor for high-side sensing, or the ground side for low-side sensing. Common-mode range -0.2 V to +26 V.
7 OUT2 output Channel 2 analog output voltage. Delivers the amplified sense-resistor voltage (gain = 20 V/V) referenced to GND, with a 2 V/µs slew rate. Drive an ADC or comparator input.
8 VS power_in Positive power supply, 2.7 V to 5.5 V. Bypass to GND with a 0.1 µF ceramic capacitor placed close to the pin. Maximum quiescent current 500 µA (dual channel).

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package VSSOP-8
Category Op-amp/Cmp
Pins 8

Ordering variants

Same part, different packaging or reel option.

  • INA2180A1IDGKR
  • INA2180A1IDGKT
  • INA2180A1IDGKRIDSGR
  • INA2180A1IDGKRIDSGT

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage VS (absolute maximum) VS 6 V 7
Differential input voltage (VIN+)-(VIN-) VIN+ - VIN- -26 26 V 7
Common-mode input voltage (IN+, IN-) VCM -0.3 26 V referenced to GND 7
Output voltage VOUT -0.3 V referenced to GND; upper limit printed as VS + 0.3 7
Maximum output current IOUT 8 mA 7
Operating ambient temperature range (natural convection) TA -55 150 °C 7
Junction temperature TJ 150 °C 7
Storage temperature Tstg -65 150 °C 7
ESD Human Body Model (HBM) V(ESD) -3000 3000 V ANSI/ESDA/JEDEC JS-001 7
ESD Charged Device Model (CDM) V(ESD) -1000 1000 V JEDEC JESD22-C101 7
Common-mode input voltage (IN+ and IN-) VCM -0.2 12 26 V 7
Operating supply voltage VS 2.7 5 5.5 V 7
Operating ambient temperature (natural convection) TA -40 125 °C 7
Junction-to-ambient thermal resistance (RθJA) RθJA 177.9 °C/W DGK (VSSOP), 8 pins 7
Junction-to-case (top) thermal resistance (RθJC(top)) RθJC(top) 65.6 °C/W DGK (VSSOP), 8 pins 7
Junction-to-board thermal resistance (RθJB) RθJB 99.3 °C/W DGK (VSSOP), 8 pins 7
Junction-to-top characterization parameter (ψJT) ψJT 10.5 °C/W DGK (VSSOP), 8 pins 7
Junction-to-board characterization parameter (ψJB) ψJB 97.9 °C/W DGK (VSSOP), 8 pins 7
Common-mode rejection ratio, RTI CMRR 84 100 dB VIN+ = 0V 至 26V, VSENSE = 10mV, TA = –40°C 至 +125°C 8
Input offset voltage, RTI (VIN+ = 0V) VOS -150 25 150 μV VIN+ = 0V 8
Input offset voltage, RTI (second row) VOS -500 100 500 μV 8
Offset voltage drift, RTI dVOS/dT 0.2 1 μV/°C TA = -40°C 至 +125°C 8
Power supply rejection ratio, RTI PSRR -40 8 40 μV/V VS = 2.7 V 至 5.5 V, VSENSE = 10 mV 8
Input offset current IIO -0.05 0.05 μA VSENSE = 0mV 8
Gain (A1 device) G 20 V/V A1 器件 8
Gain error EG -1 0.1 1 % VOUT = 0.5V 至 VS – 0.5V, TA = –40°C 至 +125°C 8
Gain error drift 1.5 20 ppm/°C TA = -40°C 至 +125°C 8
Nonlinearity error -0.01 0.01 % VOUT = 0.5V 至 VS – 0.5V 8
Maximum capacitive load CLOAD 1 nF no sustained oscillation 8
Output voltage swing from VS rail (VSN/VSP reference) VSN 0.0005 0.005 V referenced to GND; RL = 10kΩ 至 GND, TA = –40°C 至 +125°C 8
Bandwidth (A1 device) BW 350 kHz A1 器件, CLOAD = 10pF 8
Slew rate SR 2 V/μs 8
Voltage noise density, RTI 40 nV/√Hz 8
Quiescent current (INA2180) IQ 355 500 μA VSENSE = 10 mV 8
Quiescent current (INA2180), over temperature IQ 520 μA VSENSE = 10mV, TA = –40°C 至 +125°C 8

CAD (KiCad official)

  • Symbol: INA2180A1IDGKR
  • Footprint: Package_SO:VSSOP-8_2.3x2mm_P0.5mm
  • 3D model: VSSOP-8 (KiCad packages3D, STEP)
  • 3D model files: ina2180a1idgkr-etched.step / ina2180a1idgkr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ina2180a1idgkr.step / ina2180a1idgkr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (50 pp, sha256 271a5242291d4eca, retrieved 2026-08-17, tier: manufacturer)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF