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Contents

README

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IKW75N65ES5

Infineon Technologies · IGBT Transistors / Modules · TO-247-3

IKW75N65ES5 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Insulated gate control terminal. V_GE(th) 3.2..4.8V (typ 4.0V). Max V_GE = ±20V DC (±30V transient, t_p ≤10µs, D<0.010). Typical drive voltage 15V; gate charge Q_G ≈ 164nC at V_CC=520V, I_C=75A.
2 C passive Collector, also connected to the package backside (metal tab). V_CE breakdown 650V min; DC I_C = 80A (limited by bondwire) at T_C=25°C; pulsed I_Cpuls = 300A. Antiparallel RAPID 1 diode's cathode is internally connected to this pin.
3 E passive Emitter. IGBT emitter and anode of the copacked antiparallel RAPID 1 diode. Internal emitter inductance L_E ≈ 13nH measured 5mm from case.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-247-3
Category Transistors/Thyristors
Pins 3

Ordering variants

Same part, different packaging or reel option.

  • IKW75N65ES5

CAD (KiCad official)

  • Symbol: IKW75N65ES5
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: ikw75n65es5-etched.step / ikw75n65es5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ikw75n65es5.step / ikw75n65es5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (16 pp, sha256 f4fff20da0ebefc8, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF