component
IKW75N65ES5
Public Made by Adomby adom
Infineon Technologies IGBT Transistors / Modules, TO-247-3. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
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Datasheet
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Contents
README
markdownIKW75N65ES5
Infineon Technologies · IGBT Transistors / Modules · TO-247-3
IKW75N65ES5 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate. Insulated gate control terminal. V_GE(th) 3.2..4.8V (typ 4.0V). Max V_GE = ±20V DC (±30V transient, t_p ≤10µs, D<0.010). Typical drive voltage 15V; gate charge Q_G ≈ 164nC at V_CC=520V, I_C=75A. |
| 2 | C | passive | Collector, also connected to the package backside (metal tab). V_CE breakdown 650V min; DC I_C = 80A (limited by bondwire) at T_C=25°C; pulsed I_Cpuls = 300A. Antiparallel RAPID 1 diode's cathode is internally connected to this pin. |
| 3 | E | passive | Emitter. IGBT emitter and anode of the copacked antiparallel RAPID 1 diode. Internal emitter inductance L_E ≈ 13nH measured 5mm from case. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Ordering variants
Same part, different packaging or reel option.
IKW75N65ES5
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter breakdown voltage | V(BR)CES | 650 | V | VGE=0V, IC=0.20mA | 5 | ||
| Gate-emitter threshold voltage | VGE(th) | 3.2 | 4 | 4.8 | V | IC=0.75mA, VCE=VGE | 5 |
| Collector-emitter saturation voltage | VCEsat | 1.42 | 1.75 | V | VGE=15.0V, IC=75.0A, Tvj=25°C | 5 | |
| Diode forward voltage | VF | 1.5 | 1.75 | V | VGE=0V, IF=75.0A, Tvj=25°C | 5 | |
| Zero gate voltage collector current | ICES | 3000 | µA | VCE=650V, VGE=0V, Tvj=25°C | 5 | ||
| Zero gate voltage collector current | ICES | 50 | µA | VCE=650V, VGE=0V, Tvj=175°C | 5 | ||
| Gate-emitter leakage current | IGES | 100 | nA | VCE=0V, VGE=20V | 5 | ||
| Collector-emitter voltage | VCE | 650 | V | Tvj ≥25°C | 4 | ||
| DC collector current | IC | 80 | A | TC=25°C, limited by Tvjmax | 4 | ||
| Pulsed collector current | ICpuls | 300 | A | tp limited by Tvjmax | 4 | ||
| Turn off safe operating area current | 300 | A | VCE ≤650V, Tvj ≤175°C, tp=1µs | 4 | |||
| Diode forward current | IF | 80 | A | TC=25°C, limited by Tvjmax | 4 | ||
| Diode pulsed current | IFpuls | 300 | A | tp limited by Tvjmax | 4 | ||
| Gate-emitter voltage (static) | VGE | -20 | 20 | V | 4 | ||
| Transient gate-emitter voltage | VGE | -30 | 30 | V | tp ≤10µs, D<0.010 | 4 | |
| Power dissipation | Ptot | 395 | W | TC=25°C | 4 | ||
| Power dissipation | Ptot | 197 | W | TC=100°C | 4 | ||
| Operating junction temperature | Tvj | -40 | 175 | °C | 4 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 4 | ||
| Soldering temperature | 260 | °C | wave soldering 1.6mm (0.063in.) from case for 10s | 4 | |||
| Mounting torque | M | 0.6 | Nm | M3 screw; maximum of 3 mounting processes | 4 | ||
| IGBT thermal resistance, junction-case | Rth(j-c) | 0.38 | K/W | 4 | |||
| Diode thermal resistance, junction-case | Rth(j-c) | 0.46 | K/W | 4 | |||
| Thermal resistance, junction-ambient | Rth(j-a) | 40 | K/W | 4 | |||
| Collector-emitter saturation voltage | VCEsat | 1.55 | V | VGE=15.0V, IC=75.0A, Tvj=125°C | 5 | ||
| Collector-emitter saturation voltage | VCEsat | 1.65 | V | VGE=15.0V, IC=75.0A, Tvj=175°C | 5 | ||
| Diode forward voltage | VF | 1.48 | V | VGE=0V, IF=75.0A, Tvj=125°C | 5 | ||
| Diode forward voltage | VF | 1.45 | V | VGE=0V, IF=75.0A, Tvj=175°C | 5 | ||
| Transconductance | gfs | 100 | S | VCE=20V, IC=75.0A | 5 | ||
| Input capacitance | Cies | 4500 | pF | VCE=25V, VGE=0V, f=1MHz | 5 | ||
| Output capacitance | Coes | 130 | pF | VCE=25V, VGE=0V, f=1MHz | 5 | ||
| Reverse transfer capacitance | Cres | 17 | pF | VCE=25V, VGE=0V, f=1MHz | 5 | ||
| Gate charge | QG | 164 | nC | VCC=520V, IC=75.0A, VGE=15V | 5 | ||
| Internal emitter inductance | LE | 13 | nH | measured 5mm (0.197 in.) from case | 5 | ||
| Turn-on delay time | td(on) | 40 | ns | Tvj=25°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF | 5 | ||
| Rise time | tr | 46 | ns | Tvj=25°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF | 5 | ||
| Turn-off delay time | td(off) | 144 | ns | Tvj=25°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF | 5 | ||
| Fall time | tf | 41 | ns | Tvj=25°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF | 5 | ||
| Turn-on energy | Eon | 2.4 | mJ | Tvj=25°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF | 5 | ||
| Turn-off energy | Eoff | 0.95 | mJ | Tvj=25°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF | 5 | ||
| Total switching energy | Ets | 3.35 | mJ | Tvj=25°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF | 5 | ||
| Diode reverse recovery time | trr | 85 | ns | Tvj=25°C, VR=400V, IF=75.0A, diF/dt=1230A/µs | 6 | ||
| Diode reverse recovery charge | Qrr | 1.8 | µC | Tvj=25°C, VR=400V, IF=75.0A, diF/dt=1230A/µs | 6 | ||
| Diode peak reverse recovery current | Irrm | 31 | A | Tvj=25°C, VR=400V, IF=75.0A, diF/dt=1230A/µs | 6 | ||
| Diode peak rate of fall of reverse recovery current | dirr/dt | -2170 | A/µs | Tvj=25°C, VR=400V, IF=75.0A, diF/dt=1230A/µs | 6 | ||
| Turn-on delay time | td(on) | 38 | ns | Tvj=150°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF | 6 | ||
| Rise time | tr | 56 | ns | Tvj=150°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF | 6 | ||
| Turn-off delay time | td(off) | 170 | ns | Tvj=150°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF | 6 | ||
| Fall time | tf | 63 | ns | Tvj=150°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF | 6 | ||
| Turn-on energy | Eon | 3.45 | mJ | Tvj=150°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF | 6 | ||
| Turn-off energy | Eoff | 1.47 | mJ | Tvj=150°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF | 6 | ||
| Total switching energy | Ets | 4.92 | mJ | Tvj=150°C, VCC=400V, IC=75.0A, VGE=0.0/15.0V, RG(on)=18.0Ω, RG(off)=5.6Ω, Lσ=30nH, Cσ=30pF | 6 | ||
| Diode reverse recovery time | trr | 140 | ns | Tvj=150°C, VR=400V, IF=75.0A, diF/dt=1020A/µs | 7 | ||
| Diode reverse recovery charge | Qrr | 4.05 | µC | Tvj=150°C, VR=400V, IF=75.0A, diF/dt=1020A/µs | 7 | ||
| Diode peak reverse recovery current | Irrm | 44.5 | A | Tvj=150°C, VR=400V, IF=75.0A, diF/dt=1020A/µs | 7 | ||
| Diode peak rate of fall of reverse recovery current | dirr/dt | -2220 | A/µs | Tvj=150°C, VR=400V, IF=75.0A, diF/dt=1020A/µs | 7 |
CAD (KiCad official)
- Symbol:
IKW75N65ES5 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
ikw75n65es5-etched.step/ikw75n65es5-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ikw75n65es5.step/ikw75n65es5.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (16 pp, sha256
f4fff20da0ebefc8, retrieved 2026-08-17, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).