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IKP10N60T

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by Ray

Infineon Technologies IGBT Transistors / Modules, TO-220-3. Datasheet-verified pinout, KiCad symbol/footprint/3D.

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Datasheet

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Contents

README

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IKP10N60T

Infineon Technologies · IGBT Transistors / Modules · TO-220-3

IKP10N60T from Infineon Technologies, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Insulated gate control terminal for the IGBT. V_GE threshold typ. 4.6V (min 4.1V, max 5.7V at I_C=0.3mA); absolute maximum V_GE = ±20V. Drive with V_GE = 15V for full enhancement (V_CE(sat) ~1.5V typ. at I_C=10A).
2 C passive Collector. High-voltage power terminal of the IGBT and cathode of the co-packaged anti-parallel Emitter Controlled HE freewheeling diode. V_CES = 600V; DC I_C = 24A @ T_C=25°C (18A @ 100°C); pulsed I_Cpuls = 30A. Electrically connected to the metal mounting tab of the TO-220 package.
3 E passive Emitter. Low-side power terminal of the IGBT and anode of the co-packaged anti-parallel freewheeling diode; also the reference for the gate drive (V_GE). Diode forward current I_F = 24A DC @ T_C=25°C (18A @ 100°C), V_F typ. 1.6V.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220-3
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: IKP10N60T
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (13 pp, sha256 e7ca7e4b662ce6e3, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF