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Contents

README

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IHW15N120R3

Infineon Technologies · IGBT Transistors / Modules · TO-247-3

IHW15N120R3 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Voltage-controlled input for switching the IGBT. VGE(th) typ 5.8V; VGE absolute max ±20V (transient ±25V). Left-most lead when viewed from the front of the TO-247-3 package (leads down).
2 C passive Collector. High-voltage power terminal of the IGBT and cathode of the monolithic body diode. VCE max 1200V; IC 15A at Tc=100°C (30A at Tc=25°C). Electrically connected to the metal mounting tab.
3 E passive Emitter. Low-side power terminal of the IGBT and anode of the monolithic body diode. Gate-emitter voltage is the drive reference (VGE). Internal emitter inductance ~13 nH measured 5mm from case.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-247-3
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: IHW15N120R3
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (15 pp, sha256 0919db278d0afb11, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF