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IGW50N60TP

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by Ray

Infineon Technologies IGBT Transistors / Modules, TO-247-3. Datasheet-verified pinout, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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IGW50N60TP

Infineon Technologies · IGBT Transistors / Modules · TO-247-3

IGW50N60TP from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Insulated gate control input; VGE(th) typ. 5.1V, absolute maximum VGE = ±20V. Drive with a low-impedance gate driver through RG(on)/RG(off) (7.0Ω typical in datasheet test conditions).
2 C passive Collector. High-voltage power terminal, VCES = 600V, IC = 80A (TC=25°C), 61A (TC=100°C); pulsed IC = 150A. Electrically connected to the TO-247 metal tab (heat sink surface).
3 E passive Emitter. Return-side power terminal; source of the load current returning to the negative rail. Internal emitter inductance LE ≈ 13 nH measured 5 mm from case.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-247-3
Category Transistors/Thyristors
Pins 3

Ordering variants

Same part, different packaging or reel option.

  • IGW50N60TP

CAD (KiCad official)

  • Symbol: IGW50N60TP
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (14 pp, sha256 418df5458466f0d8, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF