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Contents

README

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HAT2016R-VB

VBsemi Elec · MOSFETs · SO-8

HAT2016R-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (N-channel). Body-diode anode reference for MOSFET 1; connect to the low-side rail or the shared source node in synchronous topologies.
2 G1 input Gate of MOSFET 1. VGS(th) = 1.0-2.5 V; absolute maximum VGS = ±20 V. Drive relative to S1; a gate resistor (typ. 4.3 Ω internal Rg) shapes switching di/dt.
3 S2 passive Source of MOSFET 2 (N-channel). Body-diode anode reference for MOSFET 2; independent from S1 inside the package.
4 G2 input Gate of MOSFET 2. VGS(th) = 1.0-2.5 V; absolute maximum VGS = ±20 V. Drive relative to S2.
5 D2 passive Drain of MOSFET 2 (N-channel). VDS(max) = 30 V. Tied to pin 6 internally for current handling and thermal spreading.
6 D2 passive Drain of MOSFET 2 (N-channel). VDS(max) = 30 V. Parallel with pin 5.
7 D1 passive Drain of MOSFET 1 (N-channel). VDS(max) = 30 V. Tied to pin 8 internally for current handling and thermal spreading.
8 D1 passive Drain of MOSFET 1 (N-channel). VDS(max) = 30 V. Parallel with pin 7.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Ordering variants

Same part, different packaging or reel option.

  • HAT2016R-VB

CAD (KiCad official)

  • Symbol: HAT2016R-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 ee54425995fbd427, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF