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Contents

README

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G80N03K

GOFORD · MOSFETs · TO-252

G80N03K from GOFORD, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Control terminal of the N-channel enhancement mode MOSFET. VGS(th) = 1.0-2.0V; maximum VGS = ±20V. Drive with VGS = 10V for RDS(on) < 4mΩ at ID = 25A.
2 D passive Drain. Also connected to the TO-252 tab (heat slug). Maximum VDS = 30V; continuous ID = 90A; pulsed IDM = 360A. Body diode anode is Source, cathode is Drain.
3 S passive Source. Reference terminal for VGS and VDS. Continuous body-diode current IS = 90A; body diode voltage VSD ≤ 1.2V at ISD = 25A, VGS = 0V.
4 D passive Drain (exposed thermal tab). Electrically identical to pin 2; serves as the primary heat-dissipation and drain-current path when soldered to a PCB copper pour.

Key specifications

Parameter Value
Manufacturer GOFORD
Package TO-252
Category Transistors/Thyristors
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • G80N03K

CAD (KiCad official)

  • Symbol: G80N03K
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (None pp, sha256 d53a44dcefed7f1b, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF