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Contents

README

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FDC855N-VB

VBsemi Elec · MOSFETs · TSOP-6

FDC855N-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain terminal of the N-channel MOSFET. Tied internally to pins 2, 5, and 6 for improved current handling and thermal dissipation. Rated VDS = 30 V, ID = 6 A (TC = 25 °C).
2 D passive Drain terminal of the N-channel MOSFET (paralleled with pins 1, 5, 6). Rated VDS = 30 V.
3 G input Gate terminal. VGS absolute maximum ± 20 V; typical gate-source threshold VGS(th) = 0.5 V to 1.5 V at ID = 250 µA. Gate resistance Rg typ. 2.5 Ω.
4 S passive Source terminal of the N-channel MOSFET. Body diode anode; forward voltage VSD typ. 0.82 V at IS = 4.4 A.
5 D passive Drain terminal of the N-channel MOSFET (paralleled with pins 1, 2, 6). Rated VDS = 30 V.
6 D passive Drain terminal of the N-channel MOSFET (paralleled with pins 1, 2, 5). Rated VDS = 30 V.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TSOP-6
Category Transistors/Thyristors
Pins 6

Ordering variants

Same part, different packaging or reel option.

  • FDC855N-VB

CAD (KiCad official)

  • Symbol: FDC855N-VB
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (None pp, sha256 f268b877e4ca1ccf, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF