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Contents

README

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FDC6308P-VB

VBsemi Elec · MOSFETs · TSOP-6

FDC6308P-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G1 input Gate of MOSFET 1. Gate-source threshold VGS(th) = -0.5 to -2.0 V; drive with VGS = -4.5 V for full enhancement (RDS(on) = 0.075 Ω). Absolute max VGS = ±12 V.
2 S2 passive Source of MOSFET 2. Typically tied to the more positive supply node for a high-side P-channel load switch. Continuous source-drain diode current IS = -1.17 A.
3 G2 input Gate of MOSFET 2. Gate-source threshold VGS(th) = -0.5 to -2.0 V; drive with VGS = -4.5 V for full enhancement (RDS(on) = 0.075 Ω). Absolute max VGS = ±12 V.
4 D2 passive Drain of MOSFET 2. VDS = -20 V max. Continuous drain current ID = -4.0 A at TC = 25 °C; pulsed IDM = -12 A. Body diode connects D2 (anode) to S2 (cathode).
5 S1 passive Source of MOSFET 1. Typically tied to the more positive supply node for a high-side P-channel load switch. Continuous source-drain diode current IS = -1.17 A.
6 D1 passive Drain of MOSFET 1. VDS = -20 V max. Continuous drain current ID = -4.0 A at TC = 25 °C; pulsed IDM = -12 A. Body diode connects D1 (anode) to S1 (cathode).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TSOP-6
Category Transistors/Thyristors
Pins 6

Ordering variants

Same part, different packaging or reel option.

  • FDC6308P-VB

CAD (KiCad official)

  • Symbol: FDC6308P-VB
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (None pp, sha256 cc937a767022212f, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF