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Contents

README

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DMN3066LQ-7

Diodes Incorporated · MOSFETs · SOT-23-3

DMN3066LQ-7 from Diodes Incorporated, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. ESD-protected control terminal of the N-channel MOSFET. VGS(TH) 0.5V-1.5V, absolute maximum VGSS = ±12V. Drives the channel between drain and source.
2 S passive Source. Return terminal of drain current for the N-channel MOSFET. Body-diode anode; typical body-diode VSD ≈ 0.7V at IS = 0.6A, VGS = 0V.
3 D passive Drain. High-voltage terminal of the N-channel MOSFET; BVDSS = 30V, continuous ID up to 3.6A at TA=+25°C (VGS=4.5V), pulsed IDM = 21A. Body-diode cathode.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23-3
Category Transistors/Thyristors
Pins 3

Ordering variants

Same part, different packaging or reel option.

  • DMN3066LQ-7
  • DMN3066LQ-7-13

CAD (KiCad official)

  • Symbol: DMN3066LQ-7
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (None pp, sha256 4e5fd7969c2d19a9, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF