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AUIRFR4105ZTRPBF-VB

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by Ray

VBsemi Elec MOSFETs, TO-252. Datasheet-verified pinout, KiCad symbol/footprint/3D.

componenttransistors-thyristorsauirfr4105ztrpbf-vb
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3D Model

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Symbol & Footprint

Schematic Symbol

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PCB Footprint

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Datasheet

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Contents

README

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AUIRFR4105ZTRPBF-VB

VBsemi Elec · MOSFETs · TO-252

AUIRFR4105ZTRPBF-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Insulated MOSFET gate; VGS absolute max ±20 V. Gate threshold voltage VGS(th) typ. 2 V (1 V min, 3 V max at VDS = VGS, ID = 250 µA). Total gate charge Qg typ. 47 nC at VDS = 30 V, VGS = 10 V, ID = 50 A.
2 D passive Drain. N-channel MOSFET drain; VDS breakdown 60 V min. Continuous ID = 58 A at TC = 25 °C (package limited), RDS(on) = 10 mΩ typ at VGS = 10 V, ID = 20 A. Also connected to the exposed tab (heat slug) of the TO-252AA package.
3 S passive Source. N-channel MOSFET source; continuous source (body diode) current IS = 50 A max. Body diode VSD typ. 1 V (max 1.5 V) at IF = 20 A, VGS = 0 V; trr typ. 45 ns.
4 D (Tab) passive Exposed thermal tab, internally connected to the Drain (pin 2). Used as the primary heat-sinking path; RthJC = 0.85 °C/W typ.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • AUIRFR4105ZTRPBF-VB

CAD (KiCad official)

  • Symbol: AUIRFR4105ZTRPBF-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (None pp, sha256 6a30dc44eda5d13c, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF